0SA5443 Search Results

diode 77G

Abstract: 77G DIODE DIODE ON SEMICONDUCTOR B34 b34 diodes on semiconductor DVH6700 varactor diode capacitance measurement dvh6731 CVH2000 DVH6742-11 varactor alpha
Contextual Info: ALPHA IND/ SEMICONDUCTOR HfiE J> • 0SA5443 0001301 Tbl M k L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

DMJ3086

Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz EHAlph AK002D4-11 Features • Designed for Military and Commercial Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Current < 16 mA Total ■ Integral Driver +5V, -5V; CMOS & TTL*

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz . i f t ' - f r ' 1' :! *C » AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits Designed for Commercial Applications Surface Mount 16 Lead SO IC Low Power Consumption 8 dB 1 dB 2 dB

Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4AE D • QS6S443 00Q1215 b7S W A L P High Voltage PIN Switching Diodes Features ■ ■ ■ ■ ■ ■ ■ Hard Glass Passivated Hermetic 500 to 1000 Volts Breakdown 0.1 to 2.5 pF Capacitance Low Series Resistance to .25 Ohms

DSG6474

Abstract: Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha
Contextual Info: Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 1 5 0 °C Storage Temperature:

Contextual Info: GaAs Dual Antenna T/R Switch DC-2.5 GHz EBAJ AS113-24 Features • T ransm it to either o f Tw o A n te nn a Ports ■ R eceive from both A n te nn a Ports ■ O perates w ith 0, - 5 Volts ■ Low DC P ow er C onsum ption ■ Low C ost Plastic P ackage Description

AT002D8-25

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits D esigned for C om m ercial Applications S urface M ount 16 Lead S O IC Low P ow er C onsum ption 8 dB 1 dB 2 dB 4 dB Description T h e A T 0 0 2 D 8 -2 5 is a M M IC F E T Digital A ttenuator

Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4ÛE 1> • 05A5443 D0D1133 7QT ■ ALP " T ‘O ' 1 ^ 7 High Frequency SOT’s Features: ■ Industry Standard Footprint ■ High Frequency Performance ■ ■ ■ Optimized Series Resistance Tape and Reel for Pick & Place 100% DC Tested

AD004T2-00

Abstract: AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS116-59
Contextual Info: GaAs MMIC 2 Watt High Linearity Cellular SPDT Switch DC-2000 MHz Ë B Â Îp fi A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■o J2 ■ Extremely Low Cost ■ Requires Fixed Positive Bias

CVG7864-01

Abstract: CVG7864-03 varactor diode q factor measurement CVG7864-02 CVG7864-04 CVG9800 S443 varactor diode capacitance measurement x band varactor diode gaas varactor diodes
Contextual Info: GaAs Hyperabrupt Varactor Diodes EBAIph CVG7864, CVG9800 Series Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon Hyperabrupt

LTR1702-03

Abstract: 502001 hf 01801 LTR1701-01 LTR1701-02 LTR1701-03 LTR1702-01 LTR1702-02 Alpha Industries pin diodes
Contextual Info: El A lpha Low Thermal Resistance, High Power Double Slug PIN Diodes LTR1701, LTR1702, LTR1704 Series Features • Hermetically Sealed ■ 0.6 nH Inductance ■ 500 Volt Breakdown ■ 1.0 to 2.0 pF Capacitance ■ 0.25 Ohm Series Resistance ■ 2.5 W att Power Dissipation