000000000FFF Search Results

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

code lock circuit flow chart

Abstract: M28W320ECB M28W320ECT M28W320
Contextual Info: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

DSP56000

Contextual Info: APPENDIX A MOTOROLA DSP OBJECT MODULE FORMAT OMF A.1 INTRODUCTION The object module format (OMF) produced by the DSP cross-assembler is an ASCII file consisting of variable-length text records. Records may be defined with a fixed number of fields or contain repeating instances of a given field (such as instructions or data). Fields

29070* intel

Abstract: transistor w18 57 small
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed

BD 147

Abstract: PIC40 PIC18F2450 usb 18f2450 PIC18F2450 pic18 T0CON PIC18F4450 DS30000 PIC18F USB 211 NC D005
Contextual Info: PIC18F2450/4450 数据手册 采用纳瓦技术的 28/40/44 引脚高性能 12 MIPS 增强型闪存 USB 单片机  2007 Microchip Technology Inc. 超前信息 DS39760A_CN 请注意以下有关 Microchip 器件代码保护功能的要点： • Microchip 的产品均达到 Microchip 数据手册中所述的技术指标。

39760D

Abstract: PIC18F2450 usb PIC18 interrupt example C codes regulator D313 example C codes pic18f for mmc card transistor D313 circuit diagram application power supply with regulator D313 18f2450 PIC18F2450 usb connection to PIC18f4450
Contextual Info: PIC18F2450/4450 Data Sheet 24/40/44-Pin High-Performance, 12 MIPS, Enhanced Flash, USB Microcontrollers with nanoWatt Technology 2008 Microchip Technology Inc. DS39760D Note the following details of the code protection feature on Microchip devices: •

Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers

88CAh

Contextual Info: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA

Contextual Info: M58CR032C M58CR032D 32 Mbit 2Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA

Contextual Info: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■

Contextual Info: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 2.7V for Input/Output – VPP = 12V for fast Program (optional) ■

M29W640

Abstract: 8858H
Contextual Info: M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 32 Mbit 2Mb x16 and 64 Mbit (4Mb x16) 3V supply, Boot Block and Uniform Block, Secure Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Supply voltage – VDDQ= 2.7V to 3.6V Input/Output Voltage

Contextual Info: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA

power supply aps 231

Abstract: 8857H 28F128W30 28F320W30 28F640W30 intel DOC
Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O 28F320W30, 28F640W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

M28W320CB

Abstract: M28W320CT
Contextual Info: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast

Contextual Info: ADVANCED INFORMATION MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C

M58WR064K

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers

PM1084

Contextual Info: MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40°C~85°C

M58WR032QB

Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
Contextual Info: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Contextual Info: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)

Stacked 4MB NOR FLASH & SRAM with AD multiplexed

Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Contextual Info: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed