0.18UM STANDARD CELL ST Search Results
0.18UM STANDARD CELL ST Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
27S07ADM/B |
![]() |
27S07A - Standard SRAM, 16X4 |
![]() |
||
27LS07DM/B |
![]() |
27LS07 - Standard SRAM, 16X4 |
![]() |
||
HM4-6504S-8/B |
![]() |
HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS |
![]() |
||
DE6B3KJ101KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
0.18UM STANDARD CELL ST Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
ARM dual port SRAM compiler
Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
|
Original |
STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 | |
TDA 9361 PS
Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
|
Original |
STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088 | |
DSPG
Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
|
Original |
STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler | |
CX5000
Abstract: CHIPX cmos ic and gates datasheet sram 200mhz 8k CX50041 CX50101 CX50211 CX50331 CX50561 CX50841
|
Original |
CX5000 CX5000 CEC034 CHIPX cmos ic and gates datasheet sram 200mhz 8k CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 | |
CHIPX
Abstract: CX5000 CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 CX51191 CX51761
|
Original |
CX5000 CX5000 CEC034 CHIPX CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 CX51191 CX51761 | |
"vlsi technology" abstract
Abstract: "vlsi technology" abstract for split-gate flash
|
Original |
CA94086, "vlsi technology" abstract "vlsi technology" abstract for split-gate flash | |
microcontroller fingerprint
Abstract: Cypress "USB Microcontroller" National semiconductor microcontroller IC free National semiconductor die microcontroller fingerprint application Fingerprint module
|
Original |
256x1bit microcontroller fingerprint Cypress "USB Microcontroller" National semiconductor microcontroller IC free National semiconductor die microcontroller fingerprint application Fingerprint module | |
tv tuner for laptop
Abstract: portable dvd player block diagram BCM2152 BCM2722 BCM2900 DVB-T Tuner I2C program USB DVB-T 2.0 diagram mbrai portable dvd player power supply portable dvd player
|
Original |
BCM2900 64-QAM 16-QAM 2900-PB00-R tv tuner for laptop portable dvd player block diagram BCM2152 BCM2722 BCM2900 DVB-T Tuner I2C program USB DVB-T 2.0 diagram mbrai portable dvd player power supply portable dvd player | |
Contextual Info: Millimeter Scale Energy Harvesting Based Sensors Steve Grady VP Marketing T his article introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using the energy surrounding the sensor |
Original |
||
ARM1020E
Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
|
Original |
STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T | |
0.18-um
Abstract: 0.35uM STI CS100A CS70DL CS-80 pMOS NAND GATE 0.35Um CS70B Fujitsu inverter CG61
|
Original |
CS70B CS70DL CS70DLS CS80DL CS80/CS80A CS90A CS100 CS90DLS CS100A/DL 0.18-um 0.35uM STI CS100A CS-80 pMOS NAND GATE 0.35Um CS70B Fujitsu inverter CG61 | |
Contextual Info: White Paper: Millimeter Scale Energy Harvesting Based Sensors Introduction to Millimeter Scale EH Powered Sensors This paper introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using |
Original |
WP-72-06 | |
vcsel spice model
Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
|
Original |
||
R1LV1616
Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
|
Original |
R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 | |
|
|||
RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
|
Original |
BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B | |
Contextual Info: Project laboratory and thesis topics at the Faculty of Electrical Engineering and Informatics INTRODUCTION – PLEASE READ CAREFULLY Dear International Student! Thank you for your interest to attend a Project Laboratory course or to prepare your BSc or MSc thesis |
Original |
||
0.18Um Standard cell ST
Abstract: DAC1350X C100 V100 resistor 100ohm
|
Original |
DAC1350X 10-BIT 75MSPS 10bit 75MSPS AVDD33A 100ohm) 0.18Um Standard cell ST DAC1350X C100 V100 resistor 100ohm | |
ES29DL320
Abstract: 3FE00
|
Original |
ES29DL320 32Mbit 125oC ES29DL320 3FE00 | |
L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
|
Original |
L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP | |
EP20K1000E
Abstract: EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600 EP20K400
|
Original |
H51007-2 EP20K1000E EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600 EP20K400 | |
EP20K1000E
Abstract: EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600
|
Original |
H51007-2 EP20K1000E EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600 | |
Large-Signal Characterization and Modeling of MOSFET for PA Applications
Abstract: NONLINEAR MODEL LDMOS
|
Original |
RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS | |
sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
|
Original |
L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi | |
ES29LV400EB-70TGI
Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
|
Original |
ES29LV400E 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400ET ES29LV400EB 48-pin ES29LV400EB-70TGI ES29LV400EB-70TG ES29LV400E BB 555 |