0.18UM STANDARD CELL ST Search Results

ARM dual port SRAM compiler

Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

TDA 9361 PS

Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

DSPG

Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
Contextual Info: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

CX5000

Abstract: CHIPX cmos ic and gates datasheet sram 200mhz 8k CX50041 CX50101 CX50211 CX50331 CX50561 CX50841
Contextual Info: DATASHEET CX5000 0.18um Structured ASIC Product Description The 0.18um CX5000 is an ASIC that utilizes the combination of an advanced metal programmable gate array and optimized EDA system to implement high performance ASIC designs while reducing application

CHIPX

Abstract: CX5000 CX50041 CX50101 CX50211 CX50331 CX50561 CX50841 CX51191 CX51761
Contextual Info: DATASHEET CX5000 0.18um Structured ASIC Product Description The 0.18um CX5000 is an ASIC that utilizes the combination of an advanced metal programmable gate array and optimized EDA system to implement high performance ASIC designs while reducing application

"vlsi technology" abstract

Abstract: "vlsi technology" abstract for split-gate flash
Contextual Info: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China

microcontroller fingerprint

Abstract: Cypress "USB Microcontroller" National semiconductor microcontroller IC free National semiconductor die microcontroller fingerprint application Fingerprint module
Contextual Info: Trusted Solutions Business Unit Email: trusted.solutions@nsc.com Website: www.trustedfoundry.com Toll Free: 1-888-498-1618 Introducing the Unique Number Generator UNG National Semiconductor offers an option that can assign a unique number ID to each integrated circuit (IC). This feature

tv tuner for laptop

Abstract: portable dvd player block diagram BCM2152 BCM2722 BCM2900 DVB-T Tuner I2C program USB DVB-T 2.0 diagram mbrai portable dvd player power supply portable dvd player
Contextual Info: BCM2900 DVB-H/DVB-T DUAL-BAND TUNER SUMMARY OF BENEFITS FEATURES • Multiband • UHF IV, V 470 MHz – 890 MHz • US L-band: 1670 MHz – 1675 MHz • 1450 MHz – 1490 MHz L-band • Single tuner for both bands: no need for separate ICs for different markets

Contextual Info: Millimeter Scale Energy Harvesting Based Sensors Steve Grady VP Marketing T his article introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using the energy surrounding the sensor

ARM1020E

Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
Contextual Info: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2

0.18-um

Abstract: 0.35uM STI CS100A CS70DL CS-80 pMOS NAND GATE 0.35Um CS70B Fujitsu inverter CG61
Contextual Info: CMOS PROCESS TECHNOLOGY 11 fujitsu-fme.com FUJITSU MICROELECTRONICS EUROPE www.fujitsu www.fujitsu fme.com ASIC & COT TECHNOLOGY ROADMAP Node 0.25um 0.18um CS70B 0.10um CS70DLS CS80DL 0.2 L gate [mm] CS70DL 0.13um CS80/CS80A ASIC/DRAM Half Pitch CS90A MPU

Contextual Info: White Paper: Millimeter Scale Energy Harvesting Based Sensors Introduction to Millimeter Scale EH Powered Sensors This paper introduces several new concepts for creating millimeter scale intelligent sensors using ambient energy harvesting to power the device autonomously. Using

vcsel spice model

Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Contextual Info: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems

R1LV1616

Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: Project laboratory and thesis topics at the Faculty of Electrical Engineering and Informatics INTRODUCTION – PLEASE READ CAREFULLY Dear International Student! Thank you for your interest to attend a Project Laboratory course or to prepare your BSc or MSc thesis

0.18Um Standard cell ST

Abstract: DAC1350X C100 V100 resistor 100ohm
Contextual Info: DAC1350X 0.18µ µm 10-BIT 75MSPS QUAD-DAC GENERAL DESCRIPTION This core is a CMOS quad-channel 10bit 75MSPS D/A converter for general & video applications. The dac1350x core is implemented in the Samsung 0.18um 3.3V CMOS process. Digital inputs are coded as straight binary.

ES29DL320

Abstract: 3FE00
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

EP20K1000E

Abstract: EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600 EP20K400
Contextual Info: 16. Description, Architecture, and Features H51007-2.2 Introduction HardCopy APEXTM devices extend the flexibility of high-density FPGAs to a cost-effective, high-volume production solution. The migration process from an Altera® FPGA to a HardCopy APEX device offers

EP20K1000E

Abstract: EP20K1500E EP20K400E EP20K600E HC20K1000 HC20K1500 HC20K400 HC20K600
Contextual Info: 8. Description, Architecture, and Features H51007-2.3 Introduction HardCopy APEXTM devices extend the flexibility of high-density FPGAs to a cost-effective, high-volume production solution. The migration process from an Altera® FPGA to a HardCopy APEX device offers

Large-Signal Characterization and Modeling of MOSFET for PA Applications

Abstract: NONLINEAR MODEL LDMOS
Contextual Info: RTUIF-28 Large-Signal Characterization and Modeling of MOSFET for PA Applications Sunyoung Lee and Tzung-Yin Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM

ES29LV400EB-70TGI

Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations