0.15 PHEMT Search Results

EC2612

Abstract: ec2612 pHEMT MAR 618 transistor
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

ec2612 phemt

Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

ec2612 pHEMT

Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low

pHEMT transistor 30GHz

Abstract: EC2612 ec2612 pHEMT 158467
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low

ec2612 phemt

Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

TGA1319A

Contextual Info: Product Application Note November 6, 2001 Robust Bias Option for 0.15 µm pHEMT MMIC Low-Noise Amplifiers Background: A bias network has been designed for low-noise MMIC amplifiers fabricated using the 0.15 um pHEMT process. This process exhibits a low pinch-off

60Ghz

Abstract: CHA2157
Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

15 GHz power amplifier Output Power 37dBm

Abstract: AN0017 CHA5052-QGG
Contextual Info: CHA5052-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

TGA4511-EPU

Contextual Info: Advance Product Information August 2, 2002 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology

Contextual Info: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.

TGA2513

Abstract: Q1-Q10 GaAs 0.15 um pHEMT
Contextual Info: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.

Contextual Info: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology

A5052A

Abstract: AN0017 CHA5052
Contextual Info: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

AN0017

Abstract: CHA5056-QGG
Contextual Info: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

PCB Rogers RO4003 substrate

Abstract: AN0017 MO-220 RO4003 QFN 5x5 Rogers RO4003
Contextual Info: PA-P013663-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The PA-P013663-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

25c1815

Abstract: TGC1411 TGC1411-EPU DOUBLE FET
Contextual Info: Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA

SUF-4000

Abstract: 15 GHz high power amplifier
Contextual Info: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from

12dBm

Abstract: Q102 TGA4508-EPU
Contextual Info: Advance Product Information December 20, 2001 37-42 GHz Low Noise Amplifier TGA4508-EPU Key Features • • • • • • 0.15 um pHEMT Technology 12 dBm Nominal Pout 13.5 dB Nominal Gain 2.7 dB Noise Figure @ 39 GHz Bias 3.5V @ 55mA, -0.5V < Vg < +0.5V

ka band gaas fet Package

Abstract: TGA4516 ka-band amplifier AMC8515
Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

TGA4516

Contextual Info: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology