95GH Search Results

UG599

Abstract: UG-595 UG-383/U waveguide
Contextual Info: Return to Noise Index WAVEGUIDE NOISE STANDARDS 12.4 TO 95GHZ ᮣ WAVEGUIDE OUTPUT CHARACTERISTICS FOR USEWITH NOISE FIGURE METERS MODEL NSI 1218W NSI 1826W NSI 2640W NSI 51826W NSI 52640W NSI 53350W

95GHz

Abstract: UG-595 UG599 UG-383
Contextual Info: WAVEGUIDE NOISE STANDARDS 12.4 TO 95GHZ ᮣ WAVEGUIDE OUTPUT CHARACTERISTICS FOR USEWITH NOISE FIGURE METERS MODEL NSI 1218W NSI 1826W NSI 2640W NSI 51826W NSI 52640W NSI 53350W NSI 5565W NSI 9095W FREQUENCY RF OUTPUT EXCESS NOISE RATIO dB 12.4-18.0 GHz

75576

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Contextual Info: T O S H IB A MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR T IM 3 7 4 2 -1 6SL TECHNICAL DATA PRELIMINARY FEATURES : • ■ HIGH GAIN LOW INTERMODULATION DISTORTION IM3 a - 4 5 d B c a t PO * 31.5 dBm , S ingle C arrier Level HIGH POWER PtdB » 42.5 dB m at 3 .7 G H z to 4 .2 G H z

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Contextual Info: TO SHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM 3742-30S L TECHNICAL DATA FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N 1M 3 = —4 5 dBc a t Po = 34.5 dBm, Single C arrier Level ■ BROAD B AN D INTERNALLY MATCHED ■ H IG H PO W ER

567567

Abstract: VK-30 09rd
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2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz

ASP-105884-01

Abstract: 13002 hj B1 PA66-GF13 5mm ldr ASP-105885-01 mj 13003 IRF 3055 DIN 16901 130 plastic PCI x1 express PCB dimensions artwork Training TV repair
Contextual Info: CONTENTS Board-to-Board Applications Fin al Inch P C B D esign T o o ls . 10-11 High S p eed Board-to-Board S y s te m s .12-27 M icro Pitch Board-to-Board S y s t e m s .28-37

MAAB

Abstract: 2SC280 2SC2811 881KB 770MHz pg 3 ab 2sc2800 CF-095 PG 5 AB
Contextual Info: - 192 - l- 7 > ÿ x ÿ - i» a a # ± Æ ♦§ a a EM « a g « Ä ti m w » S * J te 5Ë £ Vceo V 35 I cbo(M) 400. 00 Vcb=25V, I e=0 Vebo(V) 4 I ebo(æA) 200.00 Veb=3V, I c=0 le (A) 1 tlFE 180.00 Vce=25V, 1c=0. 1A # Â : Vcc=24V, Po=5», f=770MHz, AB & X¡

CGY2108GS

Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Contextual Info: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services

Contextual Info: DATA SHEET WIRELESS COMPONENTS Ceramic Chip Antenna ANT5320LL04R2455A 2.4 AND 5GHZ Product Specification – January 25, 2013 V.0 5320 Series Product specification WIRELESS COMPONENTS FEATURES z Compact size z Omni-directional radiation z Dual-band design

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT