0 280 130 044 Search Results

SICK WL 25 123

Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Contextual Info: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a

Contextual Info: Not for New Design 151 RLH www.vishay.com Vishay BCcomponents Aluminum Capacitors Radial Long-Life, High Voltage FEATURES • • • • • 044 RSH 85 ° C 151 RLH 105 °C miniaturized 152 RMH low voltage 148 RUS miniaturized APPLICATIONS • High-reliability and professional applications

RX1214B350Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

ana 650 DIP 8

Abstract: HV04
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

101 2KV

Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

HV02

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

0022 1kv

Abstract: 101 2KV 223 1KV capacitor 270 2kv HV03 140-042 AN240 HIGH VOLTAGE capacitor 4kv hv 102 AN120
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

HV04

Abstract: 102 3KV
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz) Capacitance Tolerances ±5%, ±10%, ±20% Operating Temperature Range

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

CAPACITOR 10k 3KV

Abstract: E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv
Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Abb M3AA 200

Abstract: Abb M3AA 160 Abb M3AA 100 M3BP abb M3BP 225 SMB 4 abb M2QA71M4B Abb M3AA 132 sc 2 M2BAT280 Abb M3AA 112 M2QA 315 L4B 4
Contextual Info: IEC Low Voltage Induction Motors 400 V 50 Hz Motors for all applications Making you more competitive ABB has been manufacturing motors for over 100 years. Our products are designed to be reliable, efficient and cost effective, and we can supply motors for

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

Contextual Info: DATA LDT, LDS SWITCHES – MOMENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination Many different application fields

Contextual Info: DATA LDT, LDS SWITCHES – M OM ENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination

Philips electrolytic 106 screw

Abstract: STR aluminium electrolytic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y

Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXBK75N170

Abstract: IXBX75N170 IXBX 75N170 PLUS247
Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ixbk75n170

Abstract: PLUS247 IXBX75N170 IXBX 75N170
Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

04B SOT363

Abstract: 35 micro-X Package MARKING CODE F
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)