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    IXBK75N170 Search Results

    IXBK75N170 Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBK75N170
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W TO264 Original PDF 5
    IXBK75N170A
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W TO264 Original PDF 6
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    IXBK75N170 Price and Stock

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    IXYS Corporation IXBK75N170

    IGBT 1700V 200A TO-264AA
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    DigiKey IXBK75N170 Tube 777 1
    • 1 $75.15
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    • 100 $54.63
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    Mouser Electronics IXBK75N170 639
    • 1 $75.15
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    TTI IXBK75N170 Tube 300
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    TME IXBK75N170 1
    • 1 $67.53
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    IXYS Corporation IXBK75N170A

    IGBTs 65Amps 1700V
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    Mouser Electronics IXBK75N170A
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    Littelfuse Inc IXBK75N170

    TRANSISTOR, IGBT, 1.7KV, 200A, TO-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04kW; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
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    Newark IXBK75N170 Bulk 146 1
    • 1 $78.07
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    • 100 $54.48
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    RS IXBK75N170 Bulk 8 Weeks 25
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    Onlinecomponents.com IXBK75N170
    • 1 -
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    IXBK75N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170 PDF

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247 PDF

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170 PDF

    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A PDF

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z PDF