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    IXBX75N170 Search Results

    IXBX75N170 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBX75N170
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W PLUS247 Original PDF 5
    IXBX75N170A
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W PLUS247 Original PDF 6
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    IXBX75N170 Price and Stock

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    IXYS Corporation IXBX75N170

    IGBT 1700V 200A PLUS247
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    DigiKey IXBX75N170 Tube 1
    • 1 $67.63
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    Mouser Electronics IXBX75N170 339
    • 1 $67.63
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    TTI IXBX75N170 Tube 300
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    TME IXBX75N170 1
    • 1 $82.20
    • 10 $65.27
    • 100 $60.92
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    New Advantage Corporation IXBX75N170 8 1
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    Vyrian IXBX75N170 42
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    IXYS Corporation IXBX75N170A

    IGBT 1700V 110A PLUS247
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    DigiKey IXBX75N170A Tube 300
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    Mouser Electronics IXBX75N170A
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    Verical IXBX75N170A 8 2
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    TTI IXBX75N170A Tube 300
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    TME IXBX75N170A 8 1
    • 1 $27.90
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    New Advantage Corporation IXBX75N170A 24 1
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    Vyrian IXBX75N170A 205
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    Littelfuse Inc IXBX75N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170
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    Newark IXBX75N170 Bulk 300
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    Rutronik IXBX75N170 Tube 180 30
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    Littelfuse Inc IXBX75N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170A
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    Newark IXBX75N170A Bulk 300
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    IXBX75N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170 PDF

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247 PDF

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170 PDF

    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A PDF

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z PDF