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    IXBX75N170A Search Results

    IXBX75N170A Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBX75N170A
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W PLUS247 Original PDF 6
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    IXYS Corporation IXBX75N170A

    IGBT 1700V 110A PLUS247
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    DigiKey IXBX75N170A Tube 300
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    New Advantage Corporation IXBX75N170A 24 1
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    Littelfuse Inc IXBX75N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170A
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    IXBX75N170A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A PDF

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z PDF