ZY- TRANSISTOR Search Results

NPN TRANSISTOR Z4

Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

New Jersey Semiconductor

Contextual Info: <zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A

transistor 3s4

Abstract: SOT-103 T-35-Z7 SOT103 BF964S 35z7 transistor SOT103 mosfet bf964
Contextual Info: PHILIPS INTERNATIONAL SbE ]> B F 9 6 4 S _ 711Dô2fci 003*4054 3S4 M P H IN FO R D E T A IL E D INFORM ATION SEE T H E L A T E S T ISSU E O F HANDBOOK SC07 OR D A T A S H E E T T~3S~Zy S IL IC O N N -C H A N N E L D U AL G A T E M O S -F E T Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected,

AE8 diode

Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
Contextual Info: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B

IPP050N06NG

Abstract: diode a43 IPB050N06NG
Contextual Info: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor ZY

Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

C3656

Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
Contextual Info: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No

marking ZO

Abstract: 2SA1588
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1588 Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current -0.5 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage

transistor marking zg

Abstract: transistor zg zy- transistor KTD1898 ZY marking
Contextual Info: KTD1898 KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 100 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking 1301 sot-23

Abstract: sot-23 Marking zy 2SA1182 zy marking sot23 1301 sot marking zo sot -6
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

KTA2015

Abstract: marking Zo
Contextual Info: KTA2015 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous

KTD1898

Contextual Info: KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 1 CLASSIFICATION OF hFE 1 A Product-Rank

transistor smd zy

Abstract: smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage

2SB1460

Contextual Info: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)

MG20Q6EK1

Abstract: 3Tg 21
Contextual Info: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. 10T0R CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain

2S114

Abstract: 2SA1423 3AAP 2SC3656
Contextual Info: Ordering number : EN 16 8 5 A 2SA1423/2SC3656 i PNP/NPN Epitaxial Planar Silicon Transistors SAKYO 080 Switching Appl ications with Bias Resistor finterface circuì/ Switching circuit, inverter circuit Features . With bias resistor (RlslOkU ,R2=10kfì ).

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Transistor BFR 135

Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
Contextual Info: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!