ZVP21 Search Results

P-Channel Enhancement Mode Vertical DMOS FET

Abstract: ZVP2120A ZVP2120C
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

1SAM

Contextual Info: ZVP2120Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET * PARTMARKING DETAIL - P10 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2120G DATASHEET ABSOLUTE M AXIM UM RATINGS PARAMETER SYM BOL » VALUE ' UNIT -200 -0.17 -1.2 Drain-Source Voltage Continuous Drain Current @ Tamb=25°C

ZVP2120A

Abstract: to92 fet p channel DSA003787
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

BS250p

Abstract: ZVP2106A fet to92 to92 fet p channel bs250 to92 fet DSA0037522
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS on =14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C

to92 fet p channel

Abstract: ZVP2110A ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS

T092

Abstract: ZVP21
Contextual Info: P-CHANNEL ENHANCEMENT ZVP21IOA MODE VERTICAL DMOS FET ISSUE 2- 1 MARCH 94 ‘DS on =8U * I ❑ FEATURES * 100 volt vD~ o G s E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed Drain C;rrent ‘DS at Tamb=25°C

Contextual Info: ZVP2106E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)280m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)850m Minimum Operating Temp (øC)-55õ

Contextual Info: P-CHANNEL ENHANCEMENT ZVP2120C MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Vo lt VDS * RDS on.=25n _ REFER TO ZVP2120A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 60 Volt V,DS * R ,DS on ' 5£i REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE Continuous Drain Current at Tam(3=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA

Contextual Info: ZVP2106Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * PARTMARKING DETAIL - ZVP2106Z - P16 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2106G DATASHEET. ABSOLUTE M AXIM UM RATINGS PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current @ Tamb=25 C

Contextual Info: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: ZVP2106B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)40Í I(D) Max. (A)760m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

Contextual Info: ZVP2106Z Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)390m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55

Contextual Info: ZVP2120A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200 I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: ZVP2106C Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)40 I(D) Max. (A)280m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

ZVP2120

Abstract: ZVP2120G ZVN2120G DSA0037407
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVP2110

Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Contextual Info: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVP210

Abstract: zvp2106 IX 1646
Contextual Info: WOSTfl ISD » ZETEX SEM ICONDUCTORS 000S 777 b ZETB 95D 0 5 7 7 7 T'37'JS P-channel enhancement mode vertical D M O S FET ZVP2106 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability • High input impedance

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 - S E P T 93_ FEATURES * 45 Volt V,DS R DS on = U £ i REFER TO ZVP2106A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

zvp2106a

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 -S E P T 93 FEATU RES * 45 Volt V,DS * R DS on =14i2 R EFER TO ZVP2106A FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Drain-Source Voltage VALUE UNIT VDS -45

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 O_ FEATURES * 200 V o lt V DS * Ros.onpzsa PARTM ARKING DETAIL - ZVP2120 CO M PLEM ENTARY TYPE - ZVN2120G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

ZVP2106

Contextual Info: ZVP2106G 60V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(on) ID TA = +25°C • • Fast Switching Speed -60V 5Ω @ VGS= -10V -450mA • Lead-Free Finish; RoHS compliant (Note 1 & 2)