ZTX751 Search Results

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

ZTX751

Abstract: FXT751 DSA003758
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT751 ISSUE 1 – FEB 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Ptot= 1 Watt APPLICATIONS * Lamp, relay or solenoid drivers * Audio circuits * Replacement of TO126 and TO220 parts REFER TO ZTX751 FOR GRAPHS

ztx750

Abstract: ztx751
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 IS S U E 2 - J U L Y 94_ FE A T U R E S * * 60 Volt V CE0 2 Am p continuous current * Low saturation voltage * P ,o t = lW a t t ABSOLUTE MAXIMUM RATINGS. PARAMETER

2TX750

Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 ISSUE 3 – JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ZTX750 ZTX751

ZTX751

Abstract: O0001 T092 ZTX750 IC225 CM 3258
Contextual Info: ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM ISSUE 2- POWER TRANSISTORS JULY I I 94 FEATURES * 60 Volt VCEO * 2 Amp * Low saturation * P,= 1 Watt }2 conti luous current voltage ,() ~f B~< / L- E-Line T092 ~BSOLUTE MAXIMUM RATINGS. PARAMETER —.— —. Collector-Base

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 I S S U E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p c o n tin u o u s current * L o w saturation voltage * P ,o f1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE M A XIM U M RATINGS.

ZTX751

Abstract: ZTX750
Contextual Info: ZTX750 Not Recommended for New Design Please Use ZTX751 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX750 SYMBOL MIN. TYP. Transition Frequency fT Switching Times

ZTX751

Abstract: ZTX750 DSA003774
Contextual Info: ZTX750 ZTX751 ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff

ztx753

Abstract: ZTX752 ztx751 SE163
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages

Contextual Info: DISCONTINUED PLEASE USE ZTX751 NPN SILICON PLANAR FXT451 MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: ZTX751 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX751

Abstract: ZTX750 ztx751 equivalent VCB-45V
Contextual Info: ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX750 SYMBOL MIN. TYP. Transition Frequency fT Switching Times ton toff Output Capacitance 100 ZTX751 MAX MIN. TYP. .

2N6726

Contextual Info: Not Recommended for New Design Please Use ZTX549 / ZTX751 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZTX751M1 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ZTX750

Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts

Contextual Info: Not Recommended for New Design Please Use ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT751 ISSUE 1 – FEB 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Ptot= 1 Watt APPLICATIONS * Lamp, relay or solenoid drivers * Audio circuits * Replacement of TO126 and TO220 parts

Contextual Info: DISCONTINUED PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT751 ISSUE 1 – FEB 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Ptot= 1 Watt APPLICATIONS * Lamp, relay or solenoid drivers * Audio circuits * Replacement of TO126 and TO220 parts REFER TO ZTX751 FOR GRAPHS

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

ZTX451M1

Abstract: ZTX649M1 ZTX651M1 ZTX653M1 ZTX655M1 ZTX657M1 ZTX749M1 ZTX751M1 ZTX753M1 ZTX755M1
Contextual Info: bOE D 4 • WD57Û 0007b63 ßb5 ■ Z E T B CENTRE BASE E-LINE 'M 1' ZETEX SEMI CONDUCTORS E-LINE " M 1 " SPECIFICATIONS BIPOLAR Super E-line M l Transistors Max. Cont. Max. Type V at Min. f T at •c •c hFE ' cm V CB0 VcEO V Max. VC£(satl at mA A V •b