ZC SOT23 Search Results

FMMV105G

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

2N3904S SOT-23

Abstract: 2N3904S zc sot23 SOT 23 ZC ZC marking
Contextual Info: SEMICONDUCTOR 2N3904S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZC 1 2 Item Marking Description Device Mark ZC 2N3904S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

FMMT4124

Abstract: DSA003692
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – MARCH 94 FMMT4124 ✪ PARTMARKING DETAIL – ZC E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO

diode schottky code 10

Abstract: marking 724 diode Schottky diode low voltage sot-23 marking code 1SS321
Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

zc marking code

Abstract: 1SS321 zc marking diode
Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: SOT23 NPN SILICON PLANAR SW ITCHING TRANSISTOR FM MT4124 PARTMARKING DETAIL FMMT4124 - ZC ABSOLUTE MAXIMUM RATINGS PA RA M ETER SYM BO L Collector-Base Voltage V A LU E UNIT V V v CBO 30 Collector-Emitter Voltage V CEO 25 Emitter-Base Voltage V EBO 5 V Continuous Collector Current

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

KSC3488

Abstract: KSC853 KSA953 KSC815
Contextual Info: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )

1N916

Abstract: 2N4124 MMBT4124
Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

KSC815

Contextual Info: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN

SOT23 MARK Y3

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2N4124

Abstract: 2n4124 pspice
Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2n3904 sot 23

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

1N916

Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

1N916

Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

MMBT4124

Abstract: MMBT6515 MMPQ3904 MMPQ6700 PZT3904
Contextual Info: This I tr in Material a fcH fc-> LU □ NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark Case Style a Copyrighted □ -C V CBO ^CEO v EBO (V) Min (V) Min (V) Min 25 5 MMBT4124 (ZC) TO-236 (49) 30 a _□ 03 MMBT6515 (3J) TO-236

Contextual Info: S iM C O M D U C T O R 2N4124 MMBT4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: 2N4124 / MMBT4124 * D iscrete POW ER & S ig n a l Technologies National S e m i c o n d u c t o r “ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynam ic range extends to 100 m A as a switch and to

2N4124 national

Abstract: 2N3904 SOT-23 2N3904 2N4124 MMBT4124
Contextual Info: 2N4124 / MMBT4124 D iscrete P O W E R & S ig n a l T echnologies National S e m ic o n d u c t o r '“ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to

zc sot23

Abstract: ZC2810E
Contextual Info: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT

IR1210

Abstract: la 4725 ZC930
Contextual Info: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 6 - JANUARY 1998 Q FEATU RES * V H F T u n in g * O ctave T u n in g fro m 0 T O 6 V o lts * High R e lia b ility and L o w P a ra sitic s * L o w Leak ag e T y p ic a lly < 200pA at 10V

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­