Z6 82 Search Results

47NF

Abstract: 600R CTR21 Z1 Transistor AG1170 Transistor z1 transistor z4 n 220R 270R 150nf
Contextual Info: Impedance Programming the Ag1170P ZB VIN Z2 ZT1 Z3 ZT2 Z5 Z1 Z4 Network Balance Z6 Terminal Impedance NOTE: ZB, VIN, ZT1 and ZT2 are pin connections for the Ag1170P interface. See Ag1170 datasheet for more details. Line Impedance 600R 600R+2.16uF 370R+620R//310nF

IN4549

Abstract: 9305-F-081 in3340 IN3305 IN3350 Z6 82 Z6B10 Z6B11 Z6b8 Z6B13
Contextual Info: Z6 Series 75W Voltage Regulator Diodes A range of high power zener and avalanche diodes available to BS 9305-F-081 in a hermetically sealed D05 package in both unipolar and bipolar configurations. P ,xco„1 - 7 5 W

Contextual Info: BZY91 / Z6 SERIES Voltage Range 7.5 - 400 Volts 5000 Watt Peak Pulse Power 100 Watt Steady State @ 25*C 75 Watt Steady State @ 65°C FEATURES * Glass Passivated Junction * 5000 Watt surge capability at 1 mS * Typically IR less than luA above 10V * Excellent clamping capability

Contextual Info: -^ 1 I .243 6.17 4 317 8-2002 p . ' o . Z6 4 ,0 .0 3 58 . (SHEAR — -AFfe d - f NOTES M A TER IA L: BRASS FIN ISH : 999 _ UNPLATED H90 I - 20 MICROINCH MIN. HOT TIN DIP F5 4 2 - 15 MICROINCH MIN. S E L E C T GOLD IN CONTACT AREA,

PJEQ

Abstract: sje 360
Contextual Info: 9 1. JO I 0 ßEd Z6/9 'lue iun oop sii]]. jo pue si]]. \b suoisiaojcI si]]. o], p e fq n s J8L]^n| si espi P8AJ8S8J s^ßu uv uoi^jodjoo |/\|g| 8911^8 Q p 9 SB | © y 00-Z^8^ H 88 931-1731. IP OP 9 6 P6 W H L U JJL U JU JU m im illlim illll^ ^ 98 L (> pea

mdd 42

Abstract: Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206
Contextual Info: AK 8 A H1 2 AH 8 AN 9 AL1 5 A H1 0 AL 9 AH 6 A K1 0 AN 5 AL 7 A K1 4 AL 5 AN 7 AE 1 Z6 AG3 AC 3 AJ 1 AE 3 AB 6 AB 4 AF 6 Y3 AA 1 AK 6 Z4 AA 3 AD 4 H RE Q# 0 H RE Q# 1 H RE Q# 2 H RE Q# 3 H RE Q# 4 A K1 8 A H1 6 A H1 8 AL1 9 AL1 7 A DS # A N3 1 H R EQ#[0.4]

sot23-6 mark code AAAM

Abstract: AFW SOT 23 AAAM SOT23-6 afz mosfet AFU SOT23-6 SOT23-6 PMOS sot23-6 aaak aabi sot23-6 mark code AABJ MAX1963EZT120
Contextual Info: 19-3040; Rev 2; 5/07 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN The MAX1963/MAX1976 low-dropout linear regulators operate from a +1.62V to +3.6V supply and deliver a guaranteed 300mA continuous load current with a low 100mV dropout. The high-accuracy ±0.5% output

8 bit full adder

Abstract: LD78 CDUD4 CBU12 266 XnOR GATE BI48 CBD12 FD51 mux24 MUX82
Contextual Info: ispLSI Macro Library Reference Manual Version 8.2 Technical Support Line: 1-800-LATTICE or 408 826-6002 IDE-ISPML-RM 8.2.1 Copyright This document may not, in whole or part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine-readable form without

SOT23-6 PMOS

Abstract: T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
Contextual Info: 19-3048; Rev 1; 5/04 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589 low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is

mosfet sot23-6 maxim

Contextual Info: 19-3048; Rev 1; 5/04 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589 low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is

PE-1206CCMC601STS

Abstract: PE-0805CCMC900STS PE-0805CCMC361STS PE-1206CCMC102STS PE-0805CCMC121STH PE-0805CCMC121STS PE-0805CCMC181STH PE-0805CCMC181STS PE-0805CCMC670STH PE-0805CCMC670STS
Contextual Info: 2-LINE CHIP STYLE COMMON MODE CHOKES ChipChoke CCMC Series Available in 0805 2012 and 1206 (3216) size For USB2.0 and other high speed differential signal lines (IEEE1394, LVDS) Suppression of common mode noise without attenuating the signal Large range of common mode impedance to fit with

PE-0805CCMC121STH

Abstract: PE-0805CCMC900STS 1206 PE-0805CCMC121TTH PE-0805CCMC181STH PE-0805CCMC181TTH PE-0805CCMC670STH PE-0805CCMC670TTH PE-0805CCMC900STH PE-0805CCMC900TTH
Contextual Info: 2-LINE CHIP STYLE COMMON MODE CHOKES ChipChoke CCMC Series Available in 0805 2012 and 1206 (3216) size For USB2.0 and other high speed differential signal lines (IEEE1394, LVDS) Suppression of common mode noise without attenuating the signal Large range of common mode impedance to fit with

SHF-0189

Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Contextual Info: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

MMG3014NT1

Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

VRD Z2015

Abstract: ZS1012U marking z2u 685 smd mark Z2015 VRD Smd zd 153 marking ZS1 ZD022 Z208 SUPPRESSOR z2047
Contextual Info: VRD TRANSIENT VOLTAGE SUPPRESSOR VRD is a transient voltage suppressor used for protecting electric circuits from surge voltage and thus preventing breakdown. VRD has superior surge suppression characteristics, such as extremely fast response time, very low clamping voltage,

AN022

Abstract: Stanford Microdevices 4 ghz MCH18 ML200C SGA-9289
Contextual Info: DESIGN APPLICATION NOTE - AN022 SGA-9289 Amplifier Application Circuits Abstract SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure

CL10B104KONC

Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Contextual Info: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

transformer 3A 6.3V filament

Abstract: 269EX 269AX TRANSFORMER CT 2A CTX13 6.8z LR3902 TRANSFORMER CT 350 mA 5v 2a transformer 263AX
Contextual Info: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)

power supply 1000 watt

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description

CL10B104KONC

Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Contextual Info: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

Contextual Info: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)

100B330JW

Abstract: chip resistors 0805 philips MRF9100 esd z10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this