6.8Z Search Results

1N3016

Abstract: 1N303 MPF 120
Contextual Info: 1N3821 thru 1N3830 M SERIES (1M 3.3A Z10 thru 1M 7.5AZ10) M O T O R O L A 1N3016 thru 1N3051 SERIES (1M 6.8Z thru 1M 2002I 1.0 W ATT 1.0 WATT M E T A L SILICON ZENER DIODES . . . a c o m p le te series o f o p e r a tin g c h a r a c te r is tic s s ilic o n -o x id e - p a s s iv a te d

IEC1000-4-2

Abstract: MAZT062H MAZT068H MAZT082H 6.8z
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Package ■ Features • Pin Name SSMini3-F2 • Pin Name 1: Cathode 1 2: Cathode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZLxxxHG Series Silicon planar type For surge absorption circuit • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Four elements anode-common type • Total power dissipation PT : 200 mW

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZZxxxH Series Silicon planar type Unit: mm 2.0±0.1 For surge absorption circuit 0.7±0.1 1 2 (0.425) M Di ain sc te on na tin nc ue e/ d • Four elements anode-common type • Power dissipation PD : 200 mW

IEC1000-4-2

Abstract: MAZZ062H MAZZ068H MAZZ082H MAZZ100H MAZZ120H 6.8Z
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZZxxxH Series Silicon planar type Unit: mm 2.0±0.1 For surge absorption circuit 0.7±0.1 • Four elements anode-common type • Power dissipation PD : 200 mW 1 2 5˚ 1.25±0.1 2.1±0.1

MAZ9120H

Abstract: IEC1000-4-2 MAZ9062H MAZ9068H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZ9xxxH Series Silicon planar type Unit: mm 0.40+0.10 –0.05 For surge absorption circuit 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Zener Diodes MAZT000H Series Silicon planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit : mm For surge absorption circuit 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5° (0.375) 1.60±0.05 0.85+0.05 –0.03 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • For surge absorption circuit

Contextual Info: ESD Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Power dissipation PD : 150 mW (0.80) 3 • Features 0.28±0.05 (0.51)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZMxxxH Series Silicon planar type Unit: mm 1.60±0.05 0.55±0.05 1.00±0.05 5° 1.20±0.05 1.60±0.05 • Four elements anode-common type • Power dissipation PD : 150 mW 4 1.20±0.05

Zener LED

Abstract: 7V Zener LED 6.8z bidirectional zener bidirectional zener diodes zener wafer bidirectional zener diode "bidirectional zener diode"
Contextual Info: April 2010 Renesas Electronics Zener Diodes for Surge Absorption Applications of high-intensity LED Problem in high-intensity LED Solution Some high-intensity LED chips are low surge level. Therefore they can have a problem for high reliability use. Zener diode absorb inrushing

IEC1000-4-2

Abstract: MAZL068H MAZL082H MAZL120H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZLxxxH Series Silicon planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 1 0.30+0.10 –0.05 Unit PD 200 mW Junction temperature Tj 150 °C Storage temperature

marking code 62z

Abstract: IEC1000-4-2 MAZM062HG MAZM068HG MAZM082HG MAZM100HG MAZM120HG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZMxxxHG Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Package • Four elements anode-common type • Power dissipation PD : 150 mW

sony lcd tv circuit diagram free

Abstract: sony DVD player with usb port circuit diagram fingerprint scanner circuit HD6417727F160CV BGA 441 SH7724 R5F61652 R5F72167ADFA R8A77240 yamaha electone
Contextual Info: 2009.10 State-of-the-art technologies of the Renesas <EQUSB> support the future of society. The USB specification established to connect the PC peripheral equipment is currently used for a number of different products in various scenarios, such as office equipment, mobile devices,

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

6.8z

Abstract: MARKING 62Z RZ MARKING MAZ9062H MAZ9068H MAZ9082H MAZL062H MAZL068H MAZT062H MAZT082H
Contextual Info: 品 新 製 ESD保護用ダイオード MAZ9/MAZL/MAZT/MAZZシリーズ • 概 要 保護用 ダイオードです。3端子5端子の小型パッケージの採用により実装面積の大幅な削減が可能です。

2m170z

Abstract: 2M11Z 2M12Z 2M13Z 2M14Z
Contextual Info: TAIWAN SEMICONDUCTOR [ s Pb RoHS 6.8Z - 2M200Z 2.0 Watts Glass Passivated Junction Silicon Zener Diodes COMPLIANCE DO-15 Features .1 4 0 3 .6 1 .0 (2 5 .4 ) MIN. .1 0 4 (2 .6 ) DIA, Plastic package has Underwriters Laboratory Flammability Classification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZMxxxH Series Silicon planar type Unit: mm 1.60±0.05 0.55±0.05 1.00±0.05 1 2 1.20±0.05 • Four elements anode-common type • Power dissipation PD : 150 mW 5° M Di ain sc te

IEC1000-4-2

Abstract: MAZ9062H MAZ9068H MAZ9120H MARKING 62Z DA RZ
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZ9xxxH Series Silicon planar type Unit: mm 0.40+0.10 –0.05 For surge absorption circuit 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C

zener diode specifications

Abstract: LB1641 IC lb1641 lb1641 data sheet free download 73098HA SIP10 EN2575E
Contextual Info: Ordering number : EN2575E Monolithic Digital IC LB1641 Bidirectional Motor Driver Overview The LB1641 is a bidirectional motor driver IC. Since it has a 2-input logic circuit and performs the functions of bidirectional driving and braking, it is capable of direct driving 6V, 9V, 12V motors. The output voltage can be varied by

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

LB1641

Abstract: lb1641 data sheet free download D2408 SIP10
Contextual Info: 注文コード No.N 2 5 7 5 E 半導体ニューズ No.N2575D をさしかえてください。 モノリシックデジタル集積回路 正/逆モータドライバ LB1641 概要 LB1641は正/逆転駆動のモータドライブ用ICである。2 入力論理で正転,逆転,ブレーキの機能をも

6.8z

Abstract: MAZT056H IEC1000-4-2 MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H
Contextual Info: ESD Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Power dissipation PD : 150 mW (0.80) 3 • Features 0.28±0.05 (0.51)

6.8z

Abstract: IEC1000-4-2 MAZM062H MAZM068H MAZM082H MAZM100H MAZM120H
Contextual Info: ESD Diodes MAZMxxxH Series Silicon planar type Unit: mm 1.60±0.05 0.55±0.05 1.00±0.05 5° 1.20±0.05 1.60±0.05 • Four elements anode-common type • Power dissipation PD : 150 mW 4 1.20±0.05 5 • Features 1.60±0.05 For surge absorption circuit 1 2

6.8z

Abstract: marking 6Z 250-2 IEC1000-4-2 MAZZ062H MAZZ068H MAZZ082H MAZZ100H MAZZ120H
Contextual Info: ESD Diodes MAZZxxxH Series Silicon planar type Unit: mm 2.0±0.1 For surge absorption circuit 0.7±0.1 • Four elements anode-common type • Power dissipation PD : 200 mW 1 2 5˚ 1.25±0.1 2.1±0.1 • Features 0.425 (0.65) (0.65) 5 4 3 0.2±0.05 0.16+0.1