Z-44 MOSFET Search Results

44P15T

Contextual Info: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

25 ohm semirigid

Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
Contextual Info: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l

transistor v2w

Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

equivalent transistor s2000

Abstract: transistor s2000 DU28200M DS20A DU28200
Contextual Info: an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz DU28200M v2.00 Features P&-4 I N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

Transistor Equivalent list

Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

20 amp MOSFET transistor

Abstract: MOSFET POWER TRANSISTOR DU2880V
Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

Contextual Info: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices

Transistor Equivalent list

Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation

Transistor Equivalent list

Abstract: SEMCO 20 amp MOSFET transistor DU1260T
Contextual Info: .-I -=c z an AMP company = RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz DU1260T v2.00 Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

DU1230S

Abstract: arco TRIMMER capacitor SEMCO
Contextual Info: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices

3F TRANSISTOR

Abstract: F2801
Contextual Info: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration

capacitor 50uf

Abstract: balun 50 ohm DU28200M transistor c s z 44 v
Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices

DU2860T

Abstract: 22 pf trimmer capacitor
Contextual Info: =zs.-E-= -=- * .-= - E an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860T v2.00 Features -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

balun transformer 75 ohm

Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS

FL 210 transistor

Abstract: LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w
Contextual Info: = - = -’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz LF2805A Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation

UF2820R

Abstract: FL2000
Contextual Info: RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz UF2820R Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C

UF2820P

Abstract: UF282OP PO520 Series PVI equivalent
Contextual Info: RF MOSFET Power 100 - 500 MHz Transistor, 2OW, 28V UF2820P v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband l Common Source Configuration l Lower Noise Floor Operation Absolute Maximum Ratings at 25°C

4000 WATT MOSFET amp

Abstract: wacom DU2880T TRIMMER capacitor 160 pF capacitor J 400
Contextual Info: an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

transistor sb 772

Abstract: TRANSISTOR b 772 p C1413 d 772 transistor
Contextual Info: y M AfMeP e o ii m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz UF2801KI V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration Lower Noise Floor 100 MHz to 500 MHz O peration

ISS270

Abstract: 1S22 DU2812OV I522 Transistor Equivalent list
Contextual Info: RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz DU2812OV Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . Absolute Maximum Ratings at 25°C

DU2820S

Abstract: fl capacitor 1000 K 739 mosfet
Contextual Info: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C

SEMCO

Abstract: DU1230S SEMCO CL
Contextual Info: = - =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices