UF281 Search Results

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

F-627-8-Q1

Abstract: F6278-Q1
Contextual Info: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3

capacitor 60uF

Abstract: 260pf capacitor uf28100v UF28100 ER 35 e transformer
Contextual Info: A f a COM W an A M P c o m p a n y RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100V V2.00 Features triT • N -Channel E n h an cem en t M ode D evice • DM OS Structure • Low er C ap acitan ces for B roadb an d O p era tio n • High Saturated O u tp u t Pow er

UF2815B

Abstract: k 815 MOSFET
Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

UF28100V

Abstract: UF28100 mosfet popwer
Contextual Info: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices

balun transformer 75 ohm

Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

transistor 1 j42

Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation

UF28156

Abstract: UF2815B L5 mosfet
Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation

Contextual Info: M fa œ m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J V2.00 Features r*|T • N -Channel E n han cem en t M ode D evice • DM OS Structure • I,ow er C ap acitan ces for B roadban d O p eratio n • C o m m o n S ou rce C on figuration

balun transformer 75 ohm

Abstract: 300 ohms balun
Contextual Info: Ajfomm m an A M P com pany RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100H V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration High Saturated O utput Power Lower Noise Figure Than Competitive Devices

Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

F627-8Q1

Abstract: F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8
Contextual Info: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3

UF28100M

Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

UF28100H

Contextual Info: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

Contextual Info: A m ßan A McP com c pany m RF MOSFET Power Transistor, 10W, 28V 100-500 MHz UF2810P V2.00 Features • N-Channel Enhancement Mode Device • DMOS Structure • • • • l.ower Capacitances for Broadband Operation Common Source Configuration I.ower Noise Floor

cis 280v

Contextual Info: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz UF2815B Features • • • • • • N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration

J50 mosfet

Abstract: UF2810P 700J1
Contextual Info: UF2810P RF Power MOSFET Transistor 10W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

Contextual Info: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

25 ohm semirigid

Contextual Info: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er

UF28100H

Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w
Contextual Info: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

UF28100M

Abstract: UF28100 transistor 200mhz 100w
Contextual Info: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

transistor f 948

Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
Contextual Info: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching

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Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left