IXTP44 Search Results

IXTP44N10T

Abstract: 44N10 IXTP 44N10T 44N10T IXTP44 IXTY44N10T 5033T
Contextual Info: Preliminary Technical Information IXTP44N10T IXTY44N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 44 A ≤ 30 m Ω TO-220 (IXTP) D (TAB) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

44P15T

Abstract: IXTP44P15T ixta44p15t IXTA44 IXTP44 TO-3P weight
Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T P-Channel Enhancement Mode Avalanche Rated - 150V - 44A Ω 65mΩ TO-3P IXTQ S (TAB) G D S G (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150

Contextual Info: TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T RDS(on) TO-220AB (IXTP) = = ≤ - 150V - 44A Ω 65mΩ TO-3P (IXTQ) G G D S D (Tab) Symbol G DS S D (Tab) Test Conditions

IXTA44P15T

Contextual Info: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V

44P15T

Contextual Info: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR

Contextual Info: TrenchTM Power MOSFET VDSS ID25 IXTY44N10T IXTP44N10T RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 44A Ω ≤ 30mΩ TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTP44N10T

Abstract: IXTY44N10T 44N10T 4425A 123B16
Contextual Info: IXTY44N10T IXTP44N10T TrenchTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 44A Ω ≤ 30mΩ TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

schematic diagram CORDLESS DRILL

Abstract: 14.4 v drill battery charger circuit diagram for 14.4 v drill battery charger schematic diagram electric drill schematic diagram of simple electric drill trigger AN025505-0911 schematic diagram of electric drill trigger schematic diagram of simple electric drill machine drill motor speed control circuit cordless drill motor speed control
Contextual Info: Application Note Control a Cordless Drill Motor and Battery Charger Using Z8 Encore! F0830 Series MCUs AN025505-0911 Abstract Currently, most hand-held electric drilling machines operating on batteries require a separate external battery charger to charge those batteries. This application note describes a

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

p-CHANNEL POWER MOSFET 600v

Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Contextual Info: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim