Z 40 MOSFET Search Results

Contextual Info: Liteon Semiconductor Corporation LSP3172 Wide Input 2.5A Step Down DC/DC Converter „ FEATURES z 2.5A Output Current z Up to 95% Efficiency z 7V to 30V Input Range z 40µA Shutdown Supply Current z 400kHz Switching Frequency z Adjustable Output Voltage z Cycle-by-Cycle Current Limit Protection

CRYDOM D40-1

Abstract: crydom d40
Contextual Info: CRYDOM CO 31E D • 2SM2S37 □□□Üb34 1 «CRY T ^ Z 5 -3 t CRYSOM BULLETIN803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability

crydom series cy

Abstract: Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07
Contextual Info: CRYDOM CO 31E T> • 2542537 OOOGbSH 1 ■ CRY -p Z 5 -3 i CPY3QM BULLETIN 803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability High Surge Ratings

Contextual Info: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State

Contextual Info: r Z 7 SGS-THOMSON Ä T # RäDSlRi i[Liera®[i!lDS$ STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R d S o ii Id S T P 4 0 N E 0 3 L -2 0 30 V < 0 .0 2 0 Q. 40 A . . . . TYPICAL RDs(on) = 0.014 £1 EXC EPTIO N AL dv/dt CAPABILITY

Contextual Info: SIE D • Ô13bb71 DGOBSöb 1SÖ m S Z K G s e m ik Roim SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k fl AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 48

VIPer30

Contextual Info: VIPer20B VIPer20BSP SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V V IP e r2 0 B /S P dss 40 0V In RDS on 1.3 A 8 .7 Q. FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP T0200KH Z . CURRENT MODE CONTROL . SOFT START AND SHUT DOWN CONTROL . AUTOMATIC BURST MODE OPERATION IN

GA-32

Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
Contextual Info: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40

Contextual Info: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

NEC 2561A

Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Contextual Info: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

80N60

Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

batterycharger

Abstract: RT9701 PORT marking sot-23-5
Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

Contextual Info: RT9704 Preliminary 50mΩ Ω, 3A Smart Universal Power Switch with Flag General Description Features The RT9704 is a low voltage, high performance single N-Channel MOSFET power switch, designed for power rail on/off control with low RDS ON ≈ 50mΩ and full protection

RT9701

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

60n20

Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Contextual Info: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions

IXFN50N80Q2

Abstract: 50N80Q2
Contextual Info: IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings

Contextual Info: RT9706 80mΩ Ω, 500mA High-Side Power Switch with Flag General Description Features The RT9706 is a cost-effective, low voltage, single N-Channel MOSFET high-side power switch, optimized for self-powered and bus-powered Universal Serial Bus USB applications. The RT9706 equipped with a charge

36p15

Abstract: IXTP36P15P 3-26-08-B
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS

IXTR140P10T

Contextual Info: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTR68P20T

Abstract: DS100375 DS-100-375
Contextual Info: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXFR64N60Q3

Contextual Info: Advance Technical Information IXFR64N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions