Z 40 MOSFET Search Results

Contextual Info: Liteon Semiconductor Corporation LSP3172 Wide Input 2.5A Step Down DC/DC Converter „ FEATURES z 2.5A Output Current z Up to 95% Efficiency z 7V to 30V Input Range z 40µA Shutdown Supply Current z 400kHz Switching Frequency z Adjustable Output Voltage z Cycle-by-Cycle Current Limit Protection

3N190

Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
Contextual Info: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g

CRYDOM D40-1

Abstract: crydom d40
Contextual Info: CRYDOM CO 31E D • 2SM2S37 □□□Üb34 1 «CRY T ^ Z 5 -3 t CRYSOM BULLETIN803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability

Contextual Info: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

crydom series cy

Abstract: Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07
Contextual Info: CRYDOM CO 31E T> • 2542537 OOOGbSH 1 ■ CRY -p Z 5 -3 i CPY3QM BULLETIN 803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability High Surge Ratings

Contextual Info: VDS 1200 V ID @ 25˚C 60 A CPM2-1200-0040B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Chip Outline High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

H100

Abstract: SML40EUZ06JD 600v 40A ultra fast recovery diode diode H48
Contextual Info: SML40EUZ06JD SEME LAB SOT-227 Package 1- Cathode 2 Enhanced Ultrafast Recovery Diode 600 Volt, 2 x 40 Amp 2- Anode 2 TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 4 0 E U Z 0 6 JD diode features a triple charge control action utilising

SSRDC100DC40

Abstract: pyrometers SSRDC200DC12 soil "electrical conductivity" C9032 omega solid state relay
Contextual Info: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State

Contextual Info: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State

diode H48

Abstract: 48 VOLT 150 AMP smps 600v 40A ultra fast recovery diode H100 SML40SUZ06JD h48 switching diode h48 diode
Contextual Info: SML40SUZ06JD SEME LAB Ultrafast Recovery Diode 600 Volt, 2 x 40 Amp SOT-227 Package 1- Cathode 2 2- Anode 2 TECHNOLOGY The planar passivated and standard ultrafast recovery SML 4 0 S U Z 0 6 JD diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

Contextual Info: r Z 7 SGS-THOMSON Ä T # RäDSlRi i[Liera®[i!lDS$ STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R d S o ii Id S T P 4 0 N E 0 3 L -2 0 30 V < 0 .0 2 0 Q. 40 A . . . . TYPICAL RDs(on) = 0.014 £1 EXC EPTIO N AL dv/dt CAPABILITY

3x2 DFN

Abstract: amplifier DFN 2x2 DFN14 3x3 LTC3824MP msop-16 MSOP-18 LT3680H LTC2481H LT3724MP LTC3589
Contextual Info: Selected High Temperature H - Grade Products Industrial Amplifiers High Speed Amplifiers 100% QA electrical tested at hot and sample tested at cold to datasheet z test limits to guarantee performance at temperatures ranging from -40°C to +150°C (or as specified in datasheet). For detailed information on H grade flow please go to http://www.linear.com/hgradeflow/.

Contextual Info: SIE D • Ô13bb71 DGOBSöb 1SÖ m S Z K G s e m ik Roim SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k fl AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 48

VIPer30

Contextual Info: VIPer20B VIPer20BSP SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V V IP e r2 0 B /S P dss 40 0V In RDS on 1.3 A 8 .7 Q. FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP T0200KH Z . CURRENT MODE CONTROL . SOFT START AND SHUT DOWN CONTROL . AUTOMATIC BURST MODE OPERATION IN

Contextual Info: SML40EUZ06B MECHANICAL DATA Dimensions in mm inches Enhanced Ultrafast Recovery Diode 600 Volt, 40 Amp T O -2 4 7 P a c k a g e B a c k TECHNOLOGY o f C a s e C a th o d e S M L 4 0 E U Z 0 6 B 1 BENEFITS • Very fast recovery for low switching losses - C a th o d e

GA-32

Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
Contextual Info: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40

Contextual Info: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

NEC 2561A

Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Contextual Info: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

80N60

Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

RT9701

Abstract: RT9701CB RT9701CBL
Contextual Info: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic

IXFN80N60

Abstract: IXFN80N60P3
Contextual Info: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C