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    IXFN80N60P3 Search Results

    IXFN80N60P3 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN80N60P3
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 66A SOT-227B Original PDF 5
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    IXFN80N60P3 Price and Stock

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    IXYS Corporation IXFN80N60P3

    MOSFET N-CH 600V 66A SOT-227B
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    DigiKey IXFN80N60P3 Tube 124 1
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    Mouser Electronics IXFN80N60P3 249
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    Littelfuse Inc IXFN80N60P3

    Discmsft Nchhiperfetpolar3 Sot-227B(Mini/ Tube |Littelfuse IXFN80N60P3
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    IXFN80N60P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN80N60

    Abstract: IXFN80N60P3
    Contextual Info: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFN80N60P3 250ns E153432 80N60P3 IXFN80N60 IXFN80N60P3 PDF

    Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		IXFN80N60P3 250ns E153432 80N60P3 PDF

    Contextual Info: IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 66A  77m 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR


    Original     		IXFN80N60P3 250ns E153432 80N60P3 PDF