Y21 TRANSISTOR Search Results

Y21 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

Y21 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor y21 sot-23 Abstract: M8550 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8550 -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23 M8550	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8550 -100mA -800mA -800mA, -80mA -20mA	PDF
transistor y21 sot-23 Contextual Info: M8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25	Original	M8550 OT-23 OT-23 -100A -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23	PDF
uhf amplifier design Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular	Original	AN419/D AN419 y12y21) uhf amplifier design 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL	PDF
AN478A Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network	Original	AN423/D AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823	PDF
z144 Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22 Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22	PDF
HP-343A Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F	PDF
z144 Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22 Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22	PDF
CA3246m Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 Contextual Info: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • Gain-Bandwidth Product fT > 3GHz The CA3227 and CA3246* consist of five general purpose	Original	CA3227, CA3246 CA3227 CA3246* TA10854 TA10855, CA3227 CA3246m CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96	PDF
ccb transistor Abstract: TRANSISTOR 100MHz Contextual Info: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a	Original	CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz	PDF
CA3246M Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6 Contextual Info: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate	Original	CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6	PDF
g21 Transistor Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor Contextual Info: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor	PDF
CA3102 Abstract: CA3102E CA3102M CA3102MZ FN611 Contextual Info: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ	PDF
B12 IC marking code Abstract: BF547 MSB003 Y22 SOT23 transistor y21 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21	PDF

CA3102 Abstract: CA3102E CA3102M MS-012-AB Contextual Info: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB	PDF
z144 Abstract: HP342A CA3127 CA3127M CA3127MZ Contextual Info: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a	Original	CA3127 FN662 CA3127 500MHz. z144 HP342A CA3127M CA3127MZ	PDF
BF547 Abstract: MSB003 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	BF547 MSB003 BF547 MSB003	PDF
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23	PDF
mbb400 Abstract: BF747 MSB003 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 mbb400 BF747 MSB003	PDF
transistor bl 187 Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748 Contextual Info: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance	OCR Scan	BF748 711062b transistor bl 187 yl1 TRANSISTOR f748 transistor ac 132 BF748	PDF
y1 npn Abstract: 538 NPN transistor Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION	OCR Scan	bbS3R31 0Q2Mb37 BF547 BF547 y1 npn 538 NPN transistor	PDF
30424 Abstract: CA3246E transistor y21 transistor 1345 CA3246 CA3227 CA3227E 92CS-30424 y12 t Y12 T SO-16 Contextual Info: G E SOLID STATE 01 D E \| 3fl7£Dfil □□mbS'4 3 \| n r r a y s _ 7^ !- CA3227, CA3246 High-Frequency N-P-N Transistor Arrays For Low -Power Applications at Frequencies up to 1.5 G H z Features: • G ain-bandw idth p ro d u c t f f > 3 GHz	OCR Scan	14bS4 CA3227, CA3246 RCA-CA3227E CA3246E* CA3227E 16-lead CA3246E 14-lead 30424 transistor y21 transistor 1345 CA3246 CA3227 92CS-30424 y12 t Y12 T SO-16	PDF
Contextual Info: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance	OCR Scan	bb53c BF748	PDF
Y12t Abstract: y12 t Contextual Info: 33 HARRIS A ugu st 1991 CA3227 CA3246 High-Frequency N -P -N Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz Features Description • Galn-Bandwldth Product f j .>3G H z The CA3227 and CA3246* consist of five general purpose	OCR Scan	CA3227 CA3246 CA3246* 16-lead 14-lead Y12t y12 t	PDF

Y21 TRANSISTOR Search Results

Y21 TRANSISTOR Result Highlights (5)

Y21 TRANSISTOR Datasheets Context Search

transistor y21 sot-23

transistor y21 sot-23

uhf amplifier design

AN478A

z144

HP-343A

z144

CA3246m

ccb transistor

CA3246M

g21 Transistor

CA3102

B12 IC marking code

CA3102

z144

BF547

MBB400

mbb400

transistor bl 187

y1 npn

30424

Y12t