Y12 T Search Results

VDE 0207, part 4

Abstract: livyy IEC 228 B1022020135 cable weight nelco* max voltage 0X022 VDE 0207, part 20 nelco 2X022
Contextual Info: Datasheet rT:2 j&99 Customer ref.: N E LC O E 3 5 ^ ' CONSTRUCTION 1 Conductors Tinned copper 7x0.20 (mm.) (AWG 24) 2) Insulation PVC type :Y12 dlam. 120 1 0.1 (mm.) Colour code: Table T002/28 - While,first conductor in the center of the caMe.YeflowGreea sfwsys (he last conductor.

TC74HC154P

Contextual Info: TC74HC154P IL00 * C-MOS 4-TO-16 LINE DECODER/DEMULTIPLEXER –TOP VIEW– 24 VDD A B C D Y14 Y13 Y12 Y11 IN IN IN IN IN IN OUT OUT OUT OUT OUT Y0 23 22 21 20 19 18 17 16 15 14 13 Y1 EN2 EN1 Y15 Y2 23 +2 to +6V 22 21 20 A Y3 B Y4 C Y5 D Y6 Y7 1 2

schleicher relays

Abstract: sno 2003-230 schleicher sno 2003 schleicher relay SNO 95256 sno 2003 schleicher K11A1 50022-35 schleicher control relay
Contextual Info: Safety Switching Devices Emergency-Stop Relay Basic Unit According to EN 60204 - 1 and EN 954 - 1 Single or Dual Channel E-Stop Possible Rated Voltage in the E-Stop Control Circuit: 24 V DC 1 SNO 2003-xx A1 Y11 Y13 13 SNO 2003 EN 60204 -1 For Stop Category

schleicher sno 2001

Abstract: schleicher relays schleicher 2001-17 schleicher control relay A 1013 schleicher relay SNO y11w
Contextual Info: Safety Switching Devices Emergency-Stop Relay Basic unit With cross monitoring According to EN 60204 - 1 and EN 954 - 1 Single or Dual Channel E-Stop Possible Rated Voltage in the E-Stop Circuit: 24 V DC 1 SNO 2001-xx 23 + + Following application of the supply voltage to terminals A1/A2, and the

schleicher sno 2002

Abstract: schleicher relays schleicher K2108 schleicher relay schleicher control relay Y14 relays din rail en 50022 circuit diagram and of single phase 230 schleicher monitor reset
Contextual Info: Safety Switching Devices Emergency-Stop Relay Basic Unit With Cross Monitoring According to EN 60204 - 1 and EN 954 - 1 Single or Dual Channel E-Stop Possible With Monitoring of the Reset Switch Rated Voltage in the E-Stop Circuit: 24 V DC new 1 SNO 2002-xx

pnoz 6

Abstract: D-73760 IEC 947-4-1
Contextual Info: Emergency Stop Relays, Safety Gate Monitors Category 4, EN 954-1 PNOZ 6 Technical Details Electrical Data Supply Voltage Emergency stop relay and safety gate monitor in accordance with VDE 0113, EN 60 204-1 and IEC 204-1. Features ● Operating mode can be

3TK2834

Abstract: pulsadores pulsador 3ZX1012-0TK28-7CA1 DIN VDE-0660 Termistor PTC siemens IEC 60947-5-1 VDE 0660 part 500 termistor PTC 104 Termistor PTC tipo A
Contextual Info: Zweihand-Steuergerät 3TK2834 DIN EN 60 439 Teil 1, VDE 0660 Teil 500 04.94 Betriebsanleitung Deutsch Bestell-Nr.: 3ZX1012-0TK28-7CA1 Warnung: Betrieb Gefährliche elektrische Spannung! Kann zu elektrischem Schlag und Verbrennungen führen. Vor Beginn der Arbeiten Anlage

mosfet p321

Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

AN215A

Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

Contextual Info: INSTR DESIGN/DISPLAY PDTS 3SE í • MêllOBb 0000042 fl « I D E A T-V/'OI _ _Zlwdea Description Part No. lv @ 3V Typ Min 201/2 Fig. No. Description Part No. lv @ 3V Min Typ 201 /2 Fig. No. - 114 201 /2 Fig. Na Flashing LED Lamps Max operating voltage 5 volts

uhf amplifier design

Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular

z144

Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

micron sram

Abstract: MS-026
Contextual Info: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD

z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

662k

Abstract: ortec 464 14120-01-445 ortec C4065 tube radiology TPMHC0158EA scintillation radiation detector R2487-02 R2487-05
Contextual Info: POSITION-SENSITIVE PHOTOMULTIPLIER TUBES WITH CROSSED WIRE ANODES R2487 SERIES 3˝ x 3˝ Square Envelope Position-Sensitive PMT with Crossed Wire Anodes For Nuclear Medical Instrument, High Energy Physics Experiments TPMHF0049 Introduction Applications The R2487 series have a bialkali photocathode, a 12-stage

g21 Transistor

Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
Contextual Info: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

mc4511

Abstract: mc4514 mc4511 equivalent MC146805 DL129 00FF 751E MC14514B MC74HC4514 MC74HCXXXXN
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC4514 1-of-16 Decoder/Demultiplexer with Address Latch High–Performance Silicon–Gate CMOS The MC74HC4514 is identical in pinout to the MC14514B metal–gate CMOS device. The device inputs are compatible with standard CMOS

49/thermostat tue 3x 102

Contextual Info: ADVANCED M IC R O N 64K X MT58LC64K32/36B3 32/36 SYNCBURST SRAM 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 ,1 1 and 12ns

Contextual Info: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

y1 npn

Abstract: 538 NPN transistor
Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION

Transistor AC 187

Abstract: AC 187 npn transistor TO 1 187 transistor npn
Contextual Info: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

cy7c516

Abstract: CY7C517 AM29516 AM29517 HMU16 HMU17 LMU16 CMGA3-P68 x10 frequency multiplier
Contextual Info: HMU16, HMU17 Data Sheet November 1999 File Number 2803.4 16 x 16-Bit CMOS Parallel Multipliers Features The HMU16 and HMU17 are high speed, low power CMOS 16-bit x 16-bit multipliers ideal for fast, real time digital signal processing applications. • 16 x 16-Bit Parallel Multiplier with Full 32-Bit Product

CA3127

Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Contextual Info: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN

crimp tools suhner 75 z-0-0-1

Abstract: 76 z-0-2-51 74 Z-0-0-157 crimp tools suhner crimp tools suhner 75 z-0-0-51 76 z-0-0-15 QMA-50-0-3 QMA-50-0-4 74 Z-0-4-1 76 z-0-2-1
Contextual Info: SUHNERR QMA SUBMINIATURE CONNECTORS Description Content SUHNER QMA coaxial connectors are available with 50 Ω impedance. The frequency range extends to 11 GHz, depending on the connector and cable type, however most of the QMA connectors are Return Loss optimised for frequencies up to