X403 Search Results

Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. WWW.CONWIN.COM PRODUCT D ATA SHEET CRYSTAL CONTROLLED OSCILLATORS X403M2 622.08 3.3V SURFACE MOUNT 5.0 x 7.5mm LVPECL CLOCK OSCILLATOR ABSOLUTE M AXIMUM RATING S

AX402

Abstract: AX403 MAX402CSA
Contextual Info: 19-3786. Rev 0 ;6 /9 1 y n y j x i y i / i High-Speed, M ic ro p o w e r Op Am ps The M A X 402/M A X403 h ig h -s p e e d , m ic ro p o w e r o p am ps are fa b ric a te d w ith M a xim 's h ig h -fre q u e n c y c o m p le m e n ­ ta ry b ip o la r process. These d e v ic e s feature a co m b in a ­

Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. WWW.CONWIN.COM PRODUCT D ATA SHEET CRYSTAL CONTROLLED OSCILLATORS X403M2 622.08 3.3V SURFACE MOUNT 5.0 x 7.5mm LVPECL CLOCK OSCILLATOR ABSOLUTE M AXIMUM RATING S

x403

Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. www.conwin.com PRODUCT D AT A SHEET CRYSTAL CONTROLLED OSCILLATORS X403M2 622.08 3.3V SURFACE MOUNT 5.0 x 7.5mm LVPECL CLOCK OSCILLATOR ABSOLUTE M AXIMUM RATING S

Sony IMX 183

Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Contextual Info: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1

DSC5002

Contextual Info: 256K x 36, 512K x 18 2.5V Synchronous ZBTTM SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features u 256K x 36, 512K x 18 memory configurations u Supports high performance system speed - 200 MHz Address and control signals are applied to the SRAM during one

IDT71V3576

Abstract: IDT71V3578
Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V3576 IDT71V3578 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:

125OC

Abstract: IDT6167 IDT6167LA IDT6167SA
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS

IDT71V2556

Abstract: IDT71V2558
Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Preliminary IDT71V2556 IDT71V2558 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ cycle, and two cycles later the associated data cycle occurs, be it read

IDT71256

Abstract: IDT71256L IDT71256S
Contextual Info: CMOS Static RAM 256K 32K x 8-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ The IDT 71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

Contextual Info: 256K x 36, 512K x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71T65702 IDT71T65902 it read or write. The IDT71T65702/5902 contain address, data-in and control signal

IDT71V67602

Abstract: IDT71V67802
Contextual Info: 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Advance Information IDT71V67602 IDT71V67802 256K x 36/512K x 18. The IDT71V676/78 SRAMs contain write, data,

IDT71T67702

Abstract: IDT71T67902
Contextual Info: 256K X 36, 512K X 18 Advance 2.5V Synchronous SRAMs Information 2.5V I/O, Burst Counter IDT71T67702 Flow-Through Outputs, Single Cycle Deselect IDT71T67902 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data

CB4CLE

Abstract: cb4re CB8CLED cb8cle CB4CLED X74-160 x4202 CB16CE sr4cled 2 bit magnitude comparator using 2 xor gates
Contextual Info: ON LIN E R LIBRARIES G UI DE T ABL E OF CONT ENT S INDEX GO T O OT HER BOOKS 0 4 0 1410 Copyright 1993-1995 Xilinx Inc. All Rights Reserved. Contents Chapter 1 Xilinx Unified Libraries Overview .

7187L55

Abstract: 7187L45
Contextual Info: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.

LC1 D12 wiring diagram

Abstract: vhdl code for 8 bit ODD parity generator 74139 Dual 2 to 4 line decoder TTL XOR2 tig ac inverter circuit cd4rle LC1 D12 P7 CB4CLED sr4cled CB16CE
Contextual Info: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_SPARTAN2 to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)

71V2578

Contextual Info: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA Description 128K x 36, 256K x 18 memory configurations

INTEGRATED DEVICE TECHNOLOGY 71V432

Contextual Info: 32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 processor interfaces. The pipelined burst architecture provides costeffective 3-1-1-1 secondary cache performance for processors up to

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

IDT71V509

Abstract: 71V509
Contextual Info: 128K x 8-Bit 3.3V Synchronous SRAM With ZBT and Flow-Through Output Advance Information IDT71V509 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Addresses and control signals are applied to the SRAM during one clock cycle, and one clock cycle later its associated data cycle occurs, be

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

A23 1101 01A

Contextual Info: 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V3557S IDT71V3559S IDT71V3557SA IDT71V3559SA it read or write. The IDT71V3557/59 contain address, data-in and control signal

Contextual Info: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity