X28C Search Results

X28C010D-15

Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C010

Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
Contextual Info: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms

Contextual Info: XM28C040 4 Megabit Module 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components

X28C512

Abstract: A15C X28C010 X28C513 X28C512 xicor z2ce
Contextual Info: K X28C512 512K B 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts —X28C512 —X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E2PROMs

ha 1555

Abstract: X2864A x2864 X28C64 X28C64-15 X28C64-20 X28C64-25 X28C64I X28C64-8K
Contextual Info: ì m X28C64 64K 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 150 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages o r Vpp Control Circuits — Self Timed — No Erase Before Write — No Complex Programming Algorithms

Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

X28C256-25

Abstract: A14D 1A11 X2864A X28C256 X28C256-15 X28C256-20 X28C256I
Contextual Info: X i Q X28C256 256K U 1 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES D E S C R IP T IO N • Access Time: 150ns • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or Vpp Control Circuits — Self Timed — No Erase Before Write

x2864

Abstract: TI25A X28C256BP-15 X28C256B X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A
Contextual Info: E4E D XI CO R INC • ^41743 0002510 1 ■ « P R E LIM IN A R Y IN F O R M A T IO N 256K Commercial Industrial X28C256B X28C256BI 32K x 8 Bit Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS — 60 mA Active Current Max. — 200 ju.A Standby Current Max.

X2864A

Abstract: x28c64 X28C64M-25 X28C64M x28c64b
Contextual Info: im ADVANCED INFORMATION 64K Military X28C64M 8K x 8 Bit Electrically Erasable PROM FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 jliA Standby Current Max. • Fast Write Cycle Times —64-Byte Page Write Operation —Byte or Page Write Cycle: 5 ms Typical

Contextual Info: UK X28C16 16K 2 K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 70ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V PP Control C ircuits — Self-Timed — No Erase Before W rite — No Com plex Program m ing A lgorithm s

x28c256

Contextual Info: JÜSB1 PRELIMINARY INFORMATION m tuc Commercial X28C256 ~OVi „ a Bit Industrial_ X28C256I_ 32K x 8 Blt _Electrically Erasable PROM FEATURES • LOW Power CMOS — 60 mA Active Current Max. — 200 ¡xA Standby Current Max.

x2864

Abstract: x28c256di
Contextual Info: Jü a r ocßi^ 256K Commercial X28C256 o o it v o Dit Industrial_ X28C256I_3 Z K x 8 B l t Electrically Erasable PROM FEATURES • LOW Power CMOS —60 mA Active Current Max. — 200 ju.A Standby Current Max. • Fast Write Cycle Times

Contextual Info: _ K X28C512 512K B 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Two PLCC and LCC Pinouts —X28C512 —X28C010 E2PROM Pin Compatible —X28C513 — Compatible with Lower Density E2PROMs • Access Time: 120 ns

Contextual Info: i m X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

Contextual Info: X28C256 256K 32K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 150ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

X28C512

Abstract: A15C X28C010 X28C513 X28C512 xicor
Contextual Info: X u X28C512 512K a r 64K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • Tw o PLCC and LCC P inouts — X28C512 — X28C010 E2PROM Pin C om patible — X28C513 — C om patible w ith Low er D e nsity E2PROMs

1-5C78

Abstract: intersil CERAMIC, LCC-32 X28C512 intersil 15t2
Contextual Info: X28C512, X28C513 Data Sheet May 23, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

GDIP1-T32

Abstract: F3262 INTERSIL LCC-32 12c772 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C010

Abstract: X28C512 X28C512-12 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable EEPROM FEATURES • Access time: 90ns • Simple byte and page write —Single 5V supply • No external high voltages or VPP control circuits —Self-timed • No erase before write • No complex programming algorithms

c 3856 data note

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC transistor T04 X28C513-12 X28C010 X28C512 X28C513 X28C512 xicor
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES 1 32 VCC PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25

X28C0101

Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
Contextual Info: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The

X28C16

Contextual Info: X28C16 16K 2K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 70ns Access Time • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or V PP Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms

X28C010

Abstract: X28C512 X28C513
Contextual Info: X28C512/X28C513 X28C512/X28C513 512K 64K x 8 Bit 5 Volt, Byte Alterable E2PROM • FEATURES NC 1 32 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 PLCC / LCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 X28C512 NC 2 31 WE A15 3 30 NC

DSUB9F

Abstract: led0805 D206 MPT05 LED-0805 2113 X22 3A 31X26 D-206 DC MOTOR 24v
Contextual Info: GND / +24V +24V GNO 5 U2594HV-S0I L-11.5XS-RM5 330uH/0,34A HEADER2.S.08.31219102 : :C101 g îâ ^ REVISION RECORD '-O '-O '-O '-O '-O '-O 1X12 [2] - X14C2] - X16 C2] X18 21 - X20C2.33 X22C2.3 - X24C2.33 X26C2.3] X28C2.3) - X30C2.3] - X32C2] X34C23 X36I23