X2864A ORDERING Search Results

X2864A

Abstract: x28c64 X28C64M-25 X28C64M x28c64b
Contextual Info: im ADVANCED INFORMATION 64K Military X28C64M 8K x 8 Bit Electrically Erasable PROM FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 jliA Standby Current Max. • Fast Write Cycle Times —64-Byte Page Write Operation —Byte or Page Write Cycle: 5 ms Typical

x2864

Abstract: x28c256di
Contextual Info: Jü a r ocßi^ 256K Commercial X28C256 o o it v o Dit Industrial_ X28C256I_3 Z K x 8 B l t Electrically Erasable PROM FEATURES • LOW Power CMOS —60 mA Active Current Max. — 200 ju.A Standby Current Max. • Fast Write Cycle Times

*26C64

Abstract: X2864B X28C64G x28c64 X23c64 INS250 X2864A x2864a ordering X2HC64 x26c
Contextual Info: ADVANCED INFORMATION Commercial X28C64 m* Industrial_X28C64I_ 8K x 8 Blt RA1£ 64K Electrically Erasable PROM FEATURES • LOW Power CMOS — 60 mA Active Current Max. —200 jliA Standby Current Max. • Fast Write Cycle Times

x2864

Abstract: TI25A X28C256BP-15 X28C256B X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A
Contextual Info: E4E D XI CO R INC • ^41743 0002510 1 ■ « P R E LIM IN A R Y IN F O R M A T IO N 256K Commercial Industrial X28C256B X28C256BI 32K x 8 Bit Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS — 60 mA Active Current Max. — 200 ju.A Standby Current Max.

Contextual Info: 256K Military X28C256M 32Kx8Bit _ Electrically Erasable PROM_ FEATURES • LOW Power CMOS — 60 mA Active Current Max. —200 juA Standby Current Max. • Fast Write Cycle Times

x2864

Abstract: X28C256M X2864A
Contextual Info: J j 256K 32K x 8 Bit Military X28C256M n Electrically Erasable PROM FEATURES • LOW Power CMOS —60 mA Active Current Max. — 200 jaA Standby Current Max. • Fast Write Cycle Times —64-Byte Page Write Operation

x2864a

Abstract: X2864B
Contextual Info: i m C/1kr 64K Commercial X2864B moo v a Rit Industrial_ X2864BI_ 8 19 2x 8B lt Electrically Erasable PROM _ DESCRIPTION TYPICAL FEATURES • 120 ns Access Time • High Perform ance Scaled NMOS Technology • Fast W rite Cycle Times

X2864BP

Abstract: x2864 x2864bd X2864B x2864bd-15 x2864BDI X2864BD-18 X2864BJ X2864BJI-18 Xicor
Contextual Info: ü a r Commercial X2864B m oovftB i* Industrial_ X2864BI_ 8192x8 Bit 64K Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation

X28C256BP15

Abstract: xicor 2206 X28C256BJI15
Contextual Info: XöP PRELIMINARY INFORMATION occ if 256K Commercial X28C256B QO„ v Q Bit Industrial_ X28C256BI_32Kx8Blt Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS —ISO mA Active Current Max. —¡200 ¡¿A Standby Current Max.

x2864h

Abstract: X2864HD X2864HP-90
Contextual Info: JÜ fiAir 64K Ö T Commercial X2864H a io o v fto i* Industrial_ X2864HI_ 8192x8B lt _ Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

Contextual Info: XICOR SHE INC D * m i? 4 3 aaaam? b A D V A N C E D IN FO R M A TIO N Commercial Industrial 64K X28C64 X28C64I 8K x 8 Bit Electrically Erasable PROM T~y¿-/3~Z7 DESCRIPTION FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 /aA Standby Current Max.

Contextual Info: 64K Military X2864HM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms

X2864BDMB

Abstract: X2864B x2864bdm x2864bemb x2864bd x2864BM X2864BDM-15
Contextual Info: im Military 64K X2864BM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 120 ns Access Time • High Performance Scaled NMOS Technology • Fa»t Write Cycle Times —32-Byte Page Write Operation —Eiyte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms

Contextual Info: E4E D XICOR INC • 1^1743 im ADVANCED INFORMATION Commercial Industrial 1K 0 0 0 E 2 fl4 E ■ X24LC01 X24LC01I 128x8 Bit Electrically Erasable PROM 13-21 TYPICAL FEATURES • 3V-6V Vcc Operation • Low Power CMOS —2 mA Active Current Typical —60 jliA Standby Current Typical

x2864b

Abstract: u 9330 X24LC01P X24LC01S X24LC01SI X2864A X28C64 x2864 X24LC01I
Contextual Info: xek ADVANCED INFORMATION iir Commercial Industrial X24LC01 X24LC01I toa v a m * h b x b b i i Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical — 60 f i A Standby Current Typical • Internally Organized 128 x 8

Contextual Info: IfiK PRELIMINARY INFORMATION AU Commercial Industrial X24LC04 X24LC04I r 10vBBi » bi i d h x Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 jliA Standby Current Typical • Internally Organized as Two Pages

X24LC04D

Abstract: X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI X2864A "512 x 8 Bit" Serial E2PROM cerdip
Contextual Info: PRELIMINARY INFORMATION Commercial Industrial 4K X24LC04 X24LC04I cío v o r í * 5 1 2* 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3V-6V V cc Operation • Low Power CMOS — 2 mA Active Current Typical — 60 fiA Standby Current Typical • Internally Organized as Two Pages

x2864

Abstract: X24LC16P X24LC16S X24LC16D X24LC16DI X24LC16PI X24LC16SI
Contextual Info: PRELIMINARY INFORMATION leu16K Commercial Industrial X24LC16 X24LC16I on/i«v oRit 2048 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3V-6V Vcc Operation • Low Power CMOS —2 mA Active Current Typical —60 ju.A Standby Current Typical • Internally Organized as Eight Pages

X2864

Abstract: x28c64
Contextual Info: im X28C64 64K 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 150ns Access Time * Simple Byte and Page Write —Single 5V Supply —No External High Voltages or Vpp Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms

x2864

Abstract: x28001 X28C010C x28c64
Contextual Info: ADVANCED INFORMATION 1M X28C010M Military 128K x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS —50 mA Active Current Max. —£¡00 ¡xA Standby Current Max. • High Speed Page Write Operation • Fast Write Cycle Times — 2156-Byte Page Size

Contextual Info: 24E D XICOR INC • TÏ41743 GD02314 JUMP M PRELIMINARY INFORMATION Commercial Industrial 16K 7 ■ X24LC16 X24LC16I m 2048 x 8 Bit Electrically Erasable PROM DESCRIPTION TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical

Contextual Info: Xaar PRELIMINARY INFORMATION icLr 16K Commercisi X24LC16 onAAvARif Industrial_ X24LC16I_ 2048x8 Bit Electrically Erasable PROM DESCRIPTION TYPICA L FEATURES • 3 V -6 V V cc Operation • Low Pow er CMOS — 2 mA Active Current Typical

X28C

Abstract: x28c64
Contextual Info: im X28C64 64K 8 K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or Vpp Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms

X28C0101

Abstract: XICOR X28C010
Contextual Info: Haas ADVANCED INFORMATION 1M Commercial X28C010 _ _ Industrial_ X28C010I_ îZoK x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS — 53 mA Active Current Max. — 590 fxA Standby Current Max. • High Speed Page Write Operation