WL 1281 Search Results

wl 1281

Abstract: A 1266
Contextual Info: 2009.10.21 14:19 페이지90 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RZ series WL ● DIMENSIONS & MAXIMUM PERMISSIBLE RIPPLE CURRENT WV 6.3 10 Impedance Ripple current Item ØDxL

3XXXS

Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
Contextual Info: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

3XXXS

Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
Contextual Info: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: PRELIMINARY V59C1256 404/804/164 Q HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: W979H6KB / W979H2KB LPDDR2-S4B 512Mb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6

74164 truth table

Abstract: W978H6KB 74191, 74192, 74193 circuit diagram
Contextual Info: W978H6KB / W978H2KB LPDDR2-S4B 256Mb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6

v59c1512

Contextual Info: PRELIMINARY V59C1512 404/804/164 Q HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6

NT6TL32M

Contextual Info: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 

NT2GC64B8HC0NS

Abstract: 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint DDR3 DIMM footprint NT2GC64B8HC0NS-CG DDR3 DIMM SPD DDR3 DIMM SPD JEDEC Nanya DDR3 PC3-10600 PC3 "cross reference"
Contextual Info: PC3-8500 / PC3-10600 Un-buffered DDR3 SO-DIMM NT2GC64B8HC0NS Based on DDR3-1066/1333 128Mx8 2GB SDRAM C-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500 PC3-10600 -BE -CG 7 9 Unit 533 667 tck – Clock Cycle 1.875

hynix lpddr2

Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
Contextual Info: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 

hynix lpddr2

Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
Contextual Info: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)

46LD16640A

Abstract: LPDDR2 SDRAM
Contextual Info: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O

DDR3 soDIMM pinout 204 pins

Contextual Info: M2N2G64CB8HC5N / M2N2G64CB8HC9N 2GB: 256M x 64 Unbuffered DDR3 SO-DIMM Based on 128Mx8 2GB DDR3 SDRAM C-Die Features •Performance: Speed Sort DIMM CAS Latency PC3-8500 PC3-10600 -BE -CG Unit 7 9 533 667 tck – Clock Cycle 1.875 1.5 ns fDQ – DQ Burst Frequency

NT6TL128M32AQ-G1

Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver

NT6TL256T32AQ

Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver

DDR3 DIMM 240 pinout

Contextual Info: M2Y2G64CB8HC5N / M2Y2G64CB8HC9N 2GB: 256M x 64 Unbuffered DDR3 SDRAM DIMM 240pin Unbuffered DDR3 SDRAM MODULE Based on 128Mx8 DDR3 SDRAM C Die Features • Performance: Speed Sort DIMM  Latency fCK Clock Frequency PC3-8500 PC3-10600 -BE -CG 7 9 533

NT1GC64BH8A1PS-BE

Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500

JESD79-3

Abstract: 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint NT2GC64B8HC0NS sstl15 DDR3-1066 DDR3-1333 PC3-10600 SSTL-15 SO-DIMM DDR3 ECC
Contextual Info: PC3-8500 / PC3-10600 Un-buffered DDR3 SO-DIMM NT2GC64B8HC0NS Based on DDR3-1066/1333 128Mx8 2GB SDRAM C-Die Features •Performance: Speed Sort PC3-8500 PC3-10600 -BE -CG 7 9 DIMM CAS Latency fck – Clock Freqency Unit 533 667 tck – Clock Cycle 1.875

Contextual Info: IS43/46LD16320A IS43/46LD32160A 512Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION APRIL 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O

Contextual Info: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM PRELIMINARY INFORMATION MARCH 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O

204 pin so-DIMM DDR3 connector

Abstract: NT1GC64BH ddr3-1333 2gb pc3-10600
Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500