WELL Search Results

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

ta7798

Abstract: TA7798P 1S152 TA7728P
Contextual Info: TOSHIBA TA7798P TENTATIVE N T S C -P A L E N C O D E R F O R T E L E T E X T , V ID E O T E X , A N D M IC R O C O M P U T E R S TA7798P is an IC designed to compose composite video signals of either NTSC or PAL type from analog RGB input signals as well as from inputs

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

Contextual Info: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means

TC5118160CJ

Abstract: tc5118160 TC5118160c
Contextual Info: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced

A100COLUMN

Contextual Info: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

tc51100ap

Abstract: DIP18-P-300E TC514100
Contextual Info: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Q62702P0956

Abstract: sfh203fa SFH203 RoHS SFH203
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)

MC14517

Abstract: 14517B Q32B Q32A
Contextual Info: MC14517B Dual 64-Bit Static Shift Register The MC14517B dual 64−bit static shift register consists of two identical, independent, 64−bit registers. Each register has separate clock and write enable inputs, as well as outputs at bits 16, 32, 48, and 64. Data

Contextual Info: PACIFIC M ONOLITHICS DATA S1-11=1=7 GALLIUM ARSENIDE SYSTEMS MODEL PM-AP0602 2-6 GHz MEDIUM-POWER MMIC AMPLIFIERS FEATURES 0.25W OUTPUT POWER 10 dB GAIN ON-CHIP GAIN CONTROL SINGLE SUPPLY VOLTAGE SMALL SIZE Pacific Monolithics medium-power amplifier chips are small, highly reliable and operate well within the

ceramic attenuator MHz

Contextual Info: Model D50AA20Z4 Surface Mount Attenuator 50 Watts, 20dB Description The D50AA20Z4 is a high performance Alumina Al2O3 Surface mount attenuator intended as a cost competitive alternative to Beryllium Oxide (BeO). The attenuator is well suited to all cellular frequency bands such

HDMI to ethernet chip

Abstract: dfn2510 lvds displayport IP4786 LVDS to hdmi IP4786CZ32 USB3 esd protection HDMI to USB3.0 chip DFN2110-9 DFN5050-32
Contextual Info: NXP solutions for consumer and computing interfaces Best-in-class protection and signal conditioning As the leading supplier of ESD protection ICs, NXP now offers ESD and surge protection, as well as signal conditioning, with added features such as level shifting. Designed for today’s most

DFN-10S1

Abstract: PLR0524P device marking T7
Contextual Info: 05381 PLR0524P Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The PLR0524P is an ultra low capacitance steering diode/TVS array. This device is designed to protect computing applications such as gigabit Ethernet, HDMI, USB and DVI interfaces as well as telecommunication equipment and systems.

SN62PB36AG02

Abstract: sn63pb37 solder wire J-STD-004 solder wire rom1 sn63pb37 solder wire shelf life kester Sn62Pb36Ag02 J-STD-004 Rosin Activated Core Wire kester 44 rosin SN63PB37 IPC-TM-650
Contextual Info: 44 Activated Rosin Cored Wire Product Description Reliability Properties Kester 44 Rosin Flux is an activated rosin formula for use in flux-cored solder wire. Kester 44 Rosin Flux has virtually dominated the field of activated rosin core solders for well over four decades. An

SH2100

Abstract: SH21-5
Contextual Info: SH Series Precision Metal-Clad Shunts L3 ±2 L1 ±1.5 6.5ø 10 slot ø6.0 holes 60mm ±.5 30mm ±.2 40mm ±.5 ø6.5 holes L2 ±1.5 400mm ±10 Precision metal clad resistors designed in four-terminal technique, are distinguished by high load capacity as well

Contextual Info: 8 Vishay Spectrol Trimmer Adjustment Tool FEATURES • Extended as well as recessed blade for critical RoHS adjustments COMPLIANT  Designed to adjust trimmers of all sizes  Available with customer trademark DIMENSIONS in millimeters 0.125 Ø 3.18 0.010