VU 725 Search Results

Contextual Info: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0

MC6504

Abstract: xn203 MC68040-25 led 7 doan MC68LC040 hall effect 44e MC68040RC25 ms8040 USPA AC M68040
Contextual Info: ,VU X )4()l I M / A I ) C68040 Rc\ I MC68EC040V MICROPROCESSORS USER'S MANUAL Introduction Integer Unit M e m o ry M anagem ent Unit (Except M C 6 8 E C 0 4 0 & M C 6 8 E C 0 4 V ) Instruction and Data Caches Signal Description IEEE 1149.1 Test Access Port (JTAG)

RX 3E

Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
Contextual Info: CORPORATION OF A M E R I C A . ELECTRONIC DATA PROCESSING PROCESSORS @ VU incui inumi RADIO REFERENCE MANUAL R A D I O C O R P O R A T I O N 70-35-601 March 1966 OF A M E R I C A The information contained herein is subject to change without notice. Revisions may be

7 segment display sm 42056

Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
Contextual Info: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition

Contextual Info: 3DUW1XPEHU ;=7+,: [PP,1 5$5 '(0,77,1*',2'( www.SunLED.com 35(/,0,1$5<63( & )HDWXUHV z PP[PP607/('PP7+,&.1(66 z /2:32:(5&2168037,21 z :,'(9,(:,1*$1*/( z ,'($/)25%$&./,*+7$1',1',&$725 z 9$5,286&2/256$1'/(167<3(6$9$,/$%/(

27645

Abstract: vu 725
Contextual Info: ^ - 1 . 0 0 7 | C ACD BCD - AA - 3A ii n n n n n n n n n n n n n n n d & N A A S A i 1 = e ! i i i ! / - INDEX AREA .225 MAX A1 1 I A 1 1 U Lu u u u u u u u u u u u u u 1 2 3 .150 MAX .01 5/.020 t —— /— WITH PLATING 1 REF

Contextual Info: 3DUW1XPEHU =7+,: [PP,1 5$5 '(0,77,1*',2'( www.SunLED.com )HDWXUHV z PP[PP607/('PP7+,&.1(66 z /2:32:(5&2168037,21 z :,'(9,(:,1*$1*/( z ,'($/)25%$&./,*+7$1',1',&$725 z 9$5,286&2/256$1'/(167<3(6$9$,/$%/( z3$&.$*(3&65(/

ICS RS 3197

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 8 0 B is a 0 .6 j C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .

Contextual Info: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 512Kx 8-BIT ADVANCE INFORMATION IDT71V424 Integrated Devize Technology, li e . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

IN5334B

Abstract: a8wg
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5V4260B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate

K356

Abstract: gti TRANSISTOR 2SK356
Contextual Info: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1M x 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

ln 3624

Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Contextual Info: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

brush dc motor control 200v 20a

Contextual Info: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the

AN7258

Abstract: an7381
Contextual Info: Panasonic ^GDftË AN7381 h — > □ V • * h □ — ^ H H iS /T o n e C o n tro l C irc u it £ A N 7381 l ± , Unit : mm ATC I C T A N 7 2 5 6 , A N 7258 U i f 2.4 ± 0 .2 5 6.0 ± 0 .3 3.3 + 0.25 ffflti: £ i:i > jfNT* h— > 3 > h o — t fz, 't'o ■

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54190B MCM5L4190B MCM5V4190B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54190B is a 0.6n C M O S high-speed dynam ic random a ccess m em ory. It is organized as 262,144 e ighteen-bit w ords and fabricated with C M O S siiicon-gate pro­

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

s0324

Abstract: land pattern for TSOP idt IDT land pattern tsop 6
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

Contextual Info: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the