27645 Search Results

Contextual Info: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

Contextual Info: CY7C024AV/024BV/025AV/026AV 3.3 V 4 K / 8 K / 16 K x 16 Dual-Port Static RAM 3.3 V 4 K / 8 K / 16 K × 16 Dual-Port Static RAM Features • Automatic power down ■ True dual-ported memory cells which enable simultaneous access of the same memory location

merlin gerin NS100N

Abstract: merlin gerin catalogue Merlin Gerin shunt trip mx merlin gerin C60 multi 9 Merlin Gerin ns160n merlin gerin C60n Merlin Gerin CIRCUIT BREAKER merlin gerin NS250h C60H Circuit Breakers Catalogue merlin gerin C60n - 24338
Contextual Info: Catalogue 2004 Merlin Gerin Miniature circuit-breakers and earth leakage circuit-breakers MCBs/ELCBs contents page Miniature circuit-breakers RCCB / ELCB Technical information Mini pragma din kit Merlin Gerin C60a 2 C60N 3 C60H 4 C60N UL489 - DC circuit breaker

026AV

Abstract: CYPRESS CROSS REFERENCE dual port sram CY7C024AV-15AI 9l reset CY7C036AV cy7c026av-20axi IO0R-IO17R
Contextual Info: CY7C024AV/024BV/025AV/026AV CY7C0241AV/0251AV/036AV 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells which enable simultaneous access of the same memory location ■ 4, 8 or 16K x 16 organization ■ CY7C024AV/024BV [1]/ 025AV/026AV

CY7C036AV

Contextual Info: CY7C024AV/025AV/026AV CY7C0241AV/0251AV/036AV 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 4/8/16K x 16 organization CY7C024AV/025AV/026AV • 4/8K × 18 organization (CY7C0241AV/0251AV)

moving average filter

Contextual Info: CY8C20X36A/46A/66A/96A CapSense Applications Features 1.71 V to 5.5 V operating range Low power CapSense® block ❐ Configurable capacitive sensing elements ❐ Supports combination of CapSense buttons, sliders, touchpads, touchscreens, and proximity sensors

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. SYM DATE 02NO85 B 11MR86 DO NOT S C A L E 20JA06 B1 AUTHORITY DR CK

2309C

Contextual Info: CY2305C CY2309C 3.3 V Zero Delay Clock Buffer 3.3 V Zero Delay Clock Buffer Features skew clocks. The -1H versions of each device operate up to 100–133 MHz frequencies and have higher drive than the -1 devices. All parts have on-chip phase locked loops PLLs which

Contextual Info: CY8C20XX6A/S 1.8 V Programmable CapSense Controller with SmartSense Auto-tuning 1–33 Buttons, 0–6 Sliders 1.8 V Programmable CapSense® Controller with SmartSense™ Auto-tuning 1–33 Buttons, 0–6 Sliders High sink current of 25 mA per GPIO • Max sink current 120 mA for all GPIOs

CY7C036AV

Contextual Info: CY7C024AV/024BV/025AV/026AV CY7C0241AV/0251AV/036AV 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells which enable simultaneous access of the same memory location ■ Fully asynchronous operation ■ Automatic power down

CY8C20446AS

Abstract: CY8C20466AS qfn-32 touch CY8C20636 IN 47 46A
Contextual Info: CY8C20X36A/46A/66A/96A/46AS/66AS 1.8 V CapSense Controller with SmartSense Auto-tuning 1.8 V CapSense® Controller with SmartSense™ Auto-tuning Dual mode GPIO: All GPIOs support digital I/O and analog inputs ❐ 25-mA sink current on each GPIO • 120 mA total sink current on all GPIOs

dataman s4

Abstract: DATAMAN S3 POWER SUPPLY DATAMAN S3 Programmer HM66205L 00000-1FFFF AMD 2716 2716 eprom manual programming by switch 2716 prom Dataman S3 AMD PROM burning
Contextual Info: DATAMAN S4 MANUAL Introduction to S4 DATAMAN S4 is a battery-powered PROM programmer for Microsystem Designers. It can readily be used for production programming too.S4 contains 128k, 256k or 512k of RAM which retains data and configuration even when switched off. The

27645

Abstract: vu 725
Contextual Info: ^ - 1 . 0 0 7 | C ACD BCD - AA - 3A ii n n n n n n n n n n n n n n n d & N A A S A i 1 = e ! i i i ! / - INDEX AREA .225 MAX A1 1 I A 1 1 U Lu u u u u u u u u u u u u u 1 2 3 .150 MAX .01 5/.020 t —— /— WITH PLATING 1 REF

Contextual Info: 128K x 8 3.3V SYNCHRONOUS SRAM WITH ZBT AND FLOW-THROUGH OUTPUT ADVANCE INFORMATION IDT71V509 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • 128K x 8 memory configuration High speed - 66 MHz 9 ns Clock-to-Data Access

CY8C20636A-24LTXI

Abstract: Epad silicon image CY8C20236A
Contextual Info: CY8C20X36A/46A/66A/96A/46AS/66AS 1.8 V CapSense Controller with SmartSense Auto-tuning CapSense® Applications Features • Wide operating range: 1.71 V to 5.5 V ■ Ultra low deep sleep current: 100 nA ❐ Configurable capacitive sensing elements ❐ 7 A per sensor at 500ms scan rate

Contextual Info: CY8C20X36A/46A/66A/96A/46AS/66AS 1.8 V CapSense Controller with SmartSense Auto-tuning 1.8 V CapSense® Controller with SmartSense™ Auto-tuning Features • Wide operating range: 1.71 V to 5.5 V ■ Ultra low deep sleep current: 100 nA ❐ Configurable capacitive sensing elements

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

S0323

Abstract: IDT71024S70 K 3568
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible

20287

Contextual Info: 128K x 8 3.3V SYNCHRONOUS SRAM WITH ZBT AND PIPELINED OUTPUT PRELIMINARY IDT71V508 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • 128K x 8 memory configuration High speed - 1 0 0 MHz 5 ns Clock-to-Data Access

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 512Kx 8-BIT ADVANCE INFORMATION IDT71V424 Integrated Devize Technology, li e . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times