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Excelitas Technologies Corporation


Excelitas Technologies Corporation VTP3310LAH Diode, Photo, 925Nm, 20°, T-1; No. Of Pins:2Pins; Diode Case Style:T-1 (3Mm); Wavelength Of Peak Sensitivity:925Nm; Angle Of Half Sensitivity ±:20°; Dark Current:0.035Μa; Operating Temperature Min:-40°C; Product Range:-; Msl:- Rohs Compliant: Yes \|Excelitas Tech VTP3310LAH
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Newark	VTP3310LAH	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTP3310LAH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH	PDF
VTP3310LAH Abstract: VTP3310L Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and	Original	VTP3310LAH VTP3310LAH VTP3310L	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and

Original

VTP3310LAH

PDF

VTP3310LAH

Abstract: VTP3310L
Contextual Info: VTP Process Photodiodes VTP3310LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and

Original

VTP3310LAH VTP3310LAH VTP3310L

PDF

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

Original

2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

PDF