VTB8341 Search Results

Contextual Info: VTB8341 VTB Process Photodiodes PACKAGE DIM ENSIONS inch mm 1.40 ( 3 5 .6 ) ( 3 .5 6 ) J .2 0 0 ( 5 .0 8 ) .2 6 2 ( 6 .6 5 ) NOM . -, .0 7 3 ( 1.8 5 ) 221 ( 5.611 .0 6 7 ( 1.7 0 ) Voc TC Voc Id R sh -20°C to 75°C Operating Temperature: -20°C to 75°C

Contextual Info: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very

VTB8341

Contextual Info: VTB8341 VTB Process Photodiodes PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2l PRODUCT DESCRIPTION Planar silicon photodiode mounted on a tw o lead ceram ic substrate and coated with a thick layer of clear epoxy. These diodes offer very high shunt

Contextual Info: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very

VTB8341H

Contextual Info: VTB Process Photodiodes VTB8341H PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very

VTB8341

Abstract: D320
Contextual Info: VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch mm CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTB8340

Abstract: VTB8341
Contextual Info: _ SbE D • 3 0 3 G b 0 T 0 0 0 1 0 S G bTfl IVCT V T B 8 3 4 0 , 8341 VTB Process Photodiodes Z 6 & 6 VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 11 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.

VTB8340

Abstract: VTB8341
Contextual Info: _ SbE D • aGBGbGT 0DD10SG VTB Process Photodiodes bT Ô I VCT V T B 8 3 4 0 , 8341 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm 1 .4 0 ( 3 5 .6 ) M IN IM UM (3 .5 6 ) f .2 6 8 (6 .8 1 ) .2 6 2 ■0 7 3 ( 1 .8 5 ) .0 6 7 f 1 .7 0 1 CASE 11 PRODUCT DESCRIPTION

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0