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    VRRM 600 IO 20 Search Results

    VRRM 600 IO 20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL540D01
    Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High Datasheet
    DCM342L01
    Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable / AEC-Q100 Datasheet
    DCL540C01
    Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low Datasheet
    DCM342H01
    Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable / AEC-Q100 Datasheet
    DCL540H01
    Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Datasheet

    VRRM 600 IO 20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BY214-200

    Abstract: BYT11-1000 BY214 BY233-400 E81734 BYT11-600 VRRM 600 IO 20 VRRM 800, IFSM 300 VRRM 600, IFSM 300 ISOWATT220AC
    Contextual Info: POWER RECTIFIERS FAST RECOVERY & GENERAL PURPOSE RECTIFIERS F126 DO-201AD AG TO220AC ISOWATT220AC TO220AC isolated ISOTOP TM TJ (max) =150°C IO VRRM IR @ rated VRRM (mA) tRR IFSM (V) VF @ rated VRRM (V) (A) (ns) (A) PLQ08 PLQ1 BYT11-600 BYT11-800 BYT11-1000


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    DO-201AD O220AC ISOWATT220AC PLQ08 BYT11-600 BYT11-800 BYT11-1000 PFR851 PFR852 BY214-200 BYT11-1000 BY214 BY233-400 E81734 BYT11-600 VRRM 600 IO 20 VRRM 800, IFSM 300 VRRM 600, IFSM 300 ISOWATT220AC PDF

    Contextual Info: BR106 thru BR1010 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 10 A Features • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive BR-10 Package Mechanical Data Case: Molded plastic body


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    BR106 BR1010 BR-10 BR106 BR108 PDF

    Contextual Info: BR66 thru BR610 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 6 A Features • Ideal for printed circuit board • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM BR-6 Package • Not ESD Sensitive


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    BR610 PDF

    Contextual Info: BR36 thru BR310 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 3 A Features • Ideal for printed circuit board • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM BR-3 Package • Not ESD Sensitive


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    BR310 PDF

    Contextual Info: BR86 thru BR810 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 8 A Features • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive BR-8 Package Mechanical Data Mounting: Hole thru for #6 screw


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    BR810 PDF

    Contextual Info: KBPC2506T/W thru KBPC2510T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 25 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation


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    KBPC2506T/W KBPC2510T/W KBPC2506T/W KBPC2508T/W PDF

    418B-04

    Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
    Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35


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    MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460 PDF

    Contextual Info: KBPC5006T/W thru KBPC5010T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 50 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation


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    KBPC5006T/W KBPC5010T/W KBPC5006T/W KBPC5008T/W PDF

    20JL2C

    Abstract: TOSHIBA DIODE DATABOOK 20JL2C41
    Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION : VRRM = 600 V Average Output Rectified Current : IO = 20 A Repetitive Peak Reverse Voltage


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    20JL2C41 20JL2C TOSHIBA DIODE DATABOOK 20JL2C41 PDF

    20JL2C

    Abstract: 20JL2C41A
    Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Output Rectified Current : IO = 20 A


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    20JL2C41A 20JL2C 20JL2C41A PDF

    20JL2C

    Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION : VRRM = 600 V z Average Output Rectified Current : IO = 20 A z Repetitive Peak Reverse Voltage


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    20JL2C41 20JL2C PDF

    Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A


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    20JL2C41A PDF

    IRAMS10UP60B-2

    Abstract: IRAMS10UP60B IRAMS10UP60 AN1049 AN-1049 data 8873 Data sheet of thermistor 10K ohms ntc IGBT DRIVER SCHEMATIC marking R1E AN-1044
    Contextual Info: PD-95830 RevH IRAMS10UP60B Absolute Maximum Ratings Parameter Description Values Units V IGBT/Diode Blocking Voltage 600 V IO @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current Note 1 10 IO @ TC=100°C VCES / VRRM + RMS Phase Current (Note 1) 5


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    PD-95830 IRAMS10UP60B AN1049 027-E2D24 IRAMS10UP60B-2 AN-1049 IRAMS10UP60B-2 IRAMS10UP60B IRAMS10UP60 AN1049 AN-1049 data 8873 Data sheet of thermistor 10K ohms ntc IGBT DRIVER SCHEMATIC marking R1E AN-1044 PDF

    IRAMS10UP60BPBF

    Abstract: DN 98-2a, application note AN-1044 marking code DN diode AN1049 IRAMS10UP60B marking R1E AN-1044 AN-1049 IR21363 IRAMS10UP60B-2
    Contextual Info: PD-95830 RevG IRAMS10UP60BPbF Absolute Maximum Ratings Parameter Description Values Units V IGBT/Diode Blocking Voltage 600 V IO @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current Note 1 10 IO @ TC=100°C VCES / VRRM + RMS Phase Current (Note 1)


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    PD-95830 IRAMS10UP60BPbF AN1049 027-E2D24 IRAMS10UP60B-2 AN-1049 IRAMS10UP60BPBF DN 98-2a, application note AN-1044 marking code DN diode AN1049 IRAMS10UP60B marking R1E AN-1044 AN-1049 IR21363 IRAMS10UP60B-2 PDF

    10JL2CZ

    Abstract: TOSHIBA DIODE DATABOOK 10JL2CZ47
    Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Output Rectified Current : IO = 10 A


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    10JL2CZ47 10JL2CZ TOSHIBA DIODE DATABOOK 10JL2CZ47 PDF

    10JL2CZ

    Abstract: TOSHIBA DIODE DATABOOK 10JL2CZ47A
    Contextual Info: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Output Rectified Current : IO = 10 A


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    10JL2CZ47A 10JL2CZ TOSHIBA DIODE DATABOOK 10JL2CZ47A PDF

    Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 10 A


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    10JL2CZ47 12-10C1A PDF

    10jl2cz

    Contextual Info: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 10 A


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    10JL2CZ47A 12-10C1A 10jl2cz PDF

    Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Average Output Rectified Current : VRRM = 600 V : IO = 30 A z Ultra Fast Reverse-Recovery Time


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    30JL2C41 12-16D1A PDF

    5JL2CZ47

    Abstract: 5jl2cz
    Contextual Info: 5JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACE HED SILICON EPITAXIAL TYPE 5JL2CZ47 SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Output Rectified Current : IO = 5 A Ultra Fast Reverse-Recovery Time


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    5JL2CZ47 5JL2CZ47 5jl2cz PDF

    Contextual Info: KBJ2506G thru KBJ2510G Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 25 A Features • Ideal for printed circuit board • Low forward voltage drop, high current capability • Plastic material has Underwriters Laboratory


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    KBJ2506G KBJ2510G KBJ2508G PDF

    Contextual Info: KBU6J thru KBU6M Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 6 A Features • Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0 • Ideal for printed circuit boards • High forward surge current capability


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    to1000 MIL-STD-750, PDF

    Contextual Info: KBJ406G thru KBJ410G Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 4 A Features • Ideal for printed circuit board • Reliable low cost construction • Plastic material has Underwriters Laboratory Flammability Classification 94V-0


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    KBJ406G KBJ410G KBJ406G KBJ408G PDF

    Contextual Info: GBU6J thru GBU6M Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V -1000 V IO = 6 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 VRMS • Glass passivated chip junction


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    MIL-STD-750 PDF