VRRM 600 IO 20 Search Results

STTA12

Abstract: BYT261PIV1000 byt12pi-1000 sttb6006p STTB6006 STTA312B VRRM 600 IO 20 sttb-406 STTA50 E81734
Contextual Info: DIODES TURBOSWITCHTM HIGH VOLTAGE RECTIFIERS SMB SMC DPAK D2PAK TM SURFACE MOUNT TURBOSWITCH RECTIFIERS TJ max =150°C IR @ 80% VRRM (mA) tRR IRM (V) VF @ rated IO (V) (ns) (A) 600 600 1200 600 600 1200 600 600 1200 600 600 1200 600 1200 600 600 1.5 1.3

sttb6006p

Abstract: BYT12PI-1000 STTA3006PI STTB3006P irm 38 STTA112U STTA206S STTA306B STTA312B STTB106U
Contextual Info: POWER RECTIFIERS TURBOSWITCHTM DIODES SMB SMC DPAK 2 D PAK TM SURFACE MOUNT TURBOSWITCH RECTIFIERS TJ max =150°C IR @ 80% VRRM (mA) tRR IRM (V) VF @ rated IO (V) (ns) (A) 600 600 1200 600 600 1200 600 600 1200 600 600 1200 600 1200 600 600 1.5 1.2 1.5 1.5

BY214-200

Abstract: BYT11-1000 BY214 BY233-400 E81734 BYT11-600 VRRM 600 IO 20 VRRM 800, IFSM 300 VRRM 600, IFSM 300 ISOWATT220AC
Contextual Info: POWER RECTIFIERS FAST RECOVERY & GENERAL PURPOSE RECTIFIERS F126 DO-201AD AG TO220AC ISOWATT220AC TO220AC isolated ISOTOP TM TJ (max) =150°C IO VRRM IR @ rated VRRM (mA) tRR IFSM (V) VF @ rated VRRM (V) (A) (ns) (A) PLQ08 PLQ1 BYT11-600 BYT11-800 BYT11-1000

Contextual Info: BR106 thru BR1010 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 10 A Features • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive BR-10 Package Mechanical Data Case: Molded plastic body

Contextual Info: BR66 thru BR610 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 6 A Features • Ideal for printed circuit board • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM BR-6 Package • Not ESD Sensitive

Contextual Info: BR36 thru BR310 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 3 A Features • Ideal for printed circuit board • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM BR-3 Package • Not ESD Sensitive

Contextual Info: W06M thru W10M Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 1.5 A Features • Ideal for printed circuit board • Low forward voltage drop WOM Package • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive

Contextual Info: BR86 thru BR810 Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 8 A Features • Low forward voltage drop • Low leakage current • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive BR-8 Package Mechanical Data Mounting: Hole thru for #6 screw

Contextual Info: KBPC2506T/W thru KBPC2510T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 25 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation

418B-04

Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35

Contextual Info: KBPC3506T/W thru KBPC3510T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 35 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation

Contextual Info: KBPC1506T/W thru KBPC1510T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 15 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation

Contextual Info: KBPC5006T/W thru KBPC5010T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 50 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation

20JL2C

Abstract: TOSHIBA DIODE DATABOOK 20JL2C41
Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION : VRRM = 600 V Average Output Rectified Current : IO = 20 A Repetitive Peak Reverse Voltage

20JL2C

Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION : VRRM = 600 V z Average Output Rectified Current : IO = 20 A z Repetitive Peak Reverse Voltage

20JL2C

Abstract: 20JL2C41
Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A

Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A

20JL2C

Abstract: 20JL2C41A
Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A

IRAMS10UP60B-2

Abstract: IRAMS10UP60B IRAMS10UP60 AN1049 AN-1049 data 8873 Data sheet of thermistor 10K ohms ntc IGBT DRIVER SCHEMATIC marking R1E AN-1044
Contextual Info: PD-95830 RevH IRAMS10UP60B Absolute Maximum Ratings Parameter Description Values Units V IGBT/Diode Blocking Voltage 600 V IO @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current Note 1 10 IO @ TC=100°C VCES / VRRM + RMS Phase Current (Note 1) 5

IRAMS10UP60BPBF

Abstract: DN 98-2a, application note AN-1044 marking code DN diode AN1049 IRAMS10UP60B marking R1E AN-1044 AN-1049 IR21363 IRAMS10UP60B-2
Contextual Info: PD-95830 RevG IRAMS10UP60BPbF Absolute Maximum Ratings Parameter Description Values Units V IGBT/Diode Blocking Voltage 600 V IO @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current Note 1 10 IO @ TC=100°C VCES / VRRM + RMS Phase Current (Note 1)

Contextual Info: PD-95830 RevG IRAMS10UP60BPbF Absolute Maximum Ratings Parameter VCES / VRRM + V IO @ TC=25°C Values Units IGBT/Diode Blocking Voltage 600 V Positive Bus Input Voltage 450 RMS Phase Current Note 1 10 Description IO @ TC=100°C RMS Phase Current (Note 1)

30JL2C

Abstract: toshiba a10 30JL2C41
Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION ! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A

10JL2CZ

Abstract: TOSHIBA DIODE DATABOOK 10JL2CZ47
Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600 V Average Output Rectified Current : IO = 10 A

6CW40

Abstract: 6cw4 NSF03A20 EP05Q04 do-214 DD100 10MQ090 6cw10
Contextual Info: 1/2 HIGH POWER SINGLE & DUAL DIODES RECTIFIER DIODES Type DO214 EC8FS6 EC10DS1 EC10DS2 EC10DS4 EC10DS6 Single/ VRRM IO AV @ Equivalents Dual V A rect - S S S S S 600 100 200 400 600 0.8 1.0 1.0 1.0 1.0 TC ˚C VFM @ V IFM A IFSM A IRRM mA Tjmax ˚C SQP £ each