VN221 Search Results

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

VN22A

Contextual Info: VN22A O i S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS O N BVdgs (max) 60V 0.3512 100 V 0 .3 5 0 Order Number / Package JÎ BVdss/ TO-92 Dicet 8A VN2206N3 VN2206ND 8A VN2210N3 VN2210ND * MIL visual screening available

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-92 Diet 100V 0.35Î2 8A VN2210N2 VN2210N3 VN2210ND a t M IL visua l screening availa ble Features

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 100V 0.35Ω 8A VN2210N2 VN2210N3 MIL visual screening available Advanced DMOS Technology Features ❏ Free from secondary breakdown

Contextual Info: VN2206 VN2210 J T _ /j _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 Dicet 60V 0.35Q 8A VN2206N2 VN2206N3 VN2206ND 100V 0.35Q 8A VN2210N2 VN2210N3 VN2210ND

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

VN2210

Contextual Info: Supertex inc. VN2210 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2210 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability

VN2210

Abstract: VN2210N2 VN2210N3
Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 100V 0.35Ω 8A VN2210N2 VN2210N3 MIL visual screening available Features Advanced DMOS Technology ❏ Free from secondary breakdown

sivn

Abstract: VN2210 VN2210N2 VN2210N3-G jedec Package TO-39
Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

VN2210

Contextual Info: VN2210 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2210 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN2206N2

Contextual Info: VN2206 VN2210 Supertexinc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information II t Order Number / Package BV0SS/ ^ D S O N BV dgs (max) TO-39 TO-92 Dicet 60V 0.35a 8A VN2206N2 VN2206N3 VN2206ND 100V 0.35Q 8A VN2210N2 VN2210N3 VN2210ND M IL visual screening ava ila b le

VN2206

Abstract: 035Q VN2206N2
Contextual Info: VN2206 VN2210 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS O N 'O(ON) Order Num ber / Package (m ax) (min) TO-39 TO-92 D iet 60V 0.35Î2 8A VN2206N2 VN2206N3 VN2206ND 100 V 0.35Q 8A VN2210N2 VN2210N3 VN2210ND bC s 1 M IL visual screening available

VN221

Abstract: TRANSISTOR LIZ
Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

diode marking 100-10 n2

Abstract: sivn 2210N2 125OC VN2210 VN2210N2 VN2210N3-G
Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VN2210

Abstract: VN2206N2 VN2206N3 VN2206ND VN2210N2 VN2210N3 VN2210ND
Contextual Info: VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 60V 0.35Ω 8A VN2206N2 VN2206N3 VN2206ND 100V 0.35Ω 8A VN2210N2 VN2210N3 VN2210ND MIL visual screening available

Contextual Info: ^ Supertex VN22A in c . N-Channel Enhancement-Mode Vertical DMOS FETs B V dss / R DS ON Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.350 8A VN2206N3 VN2206ND 100 V 0.35H 8A VN2210N3 VN2210ND b v dgs t (max) If Ordering Information

Contextual Info: VN2210N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1 Minimum Operating Temp (øC)-55

SIVN2210

Abstract: sivn 125OC VN2210 VN2210N2 VN2210N3-G
Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VN2210

Abstract: VN2210N2 VN2210N3 VN2210ND
Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 100V 0.35Ω 8A VN2210N2 VN2210N3 VN2210ND MIL visual screening available 7 Features Advanced DMOS Technology

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

2N7008

Contextual Info: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 220V 1.25Ω 240V 1.25Ω Order Number / Package TO-92 20-Pin C-Dip 5.0A – VN2222NC 5.0A VN2224N3 – 7 Advanced DMOS Technology High Reliability Devices