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    2210N2 Search Results

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    2210N2 Price and Stock

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    Diodes Incorporated AP2210N-2.8TRE1

    - Tape and Reel (Alt: AP2210N-2.8TRE1)
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    Avnet Americas AP2210N-2.8TRE1 Tape & Reel 28 Weeks 3,000
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    Mouser Electronics AP2210N-2.8TRE1
    • 1 $0.21
    • 10 $0.14
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    Microchip Technology Inc VN2210N2

    - Bag (Alt: VN2210N2)
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    Avnet Americas VN2210N2 Bag 5 Weeks 500
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    Mouser Electronics VN2210N2 34
    • 1 $16.87
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    Newark VN2210N2 Bulk 500
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    RS VN2210N2 Bulk 10 Weeks 500
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    • 1000 $16.87
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    Microchip Technology Inc VN2210N2 Bag 5 Weeks
    • 1 $16.87
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    • 100 $14.01
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    Bristol Electronics VN2210N2 42
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    Avnet Silica VN2210N2 7 Weeks 500
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    EBV Elektronik VN2210N2 6 Weeks 500
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    Master Electronics VN2210N2 291
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    • 10 $16.83
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    Diodes Incorporated AP2210N-2.5TRE1

    - Tape and Reel (Alt: AP2210N-2.5TRE1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AP2210N-2.5TRE1 Tape & Reel 20 Weeks 3,000
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    Mouser Electronics AP2210N-2.5TRE1 312
    • 1 $0.21
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    TME AP2210N-2.5TRE1 3,000
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    Avnet Silica AP2210N-2.5TRE1 3,000 22 Weeks 3,000
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    SOURIAU-SUNBANK SB02A1E2210N2

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    PEI Genesis SB02A1E2210N2
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    2210N2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode


    Original     		vn2210dsfp-vn2210d071411 PDF

    Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		vn2210dsfp-vn2210b091508 PDF

    Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability


    Original     		vn2210dsfp-vn2210e082013 PDF

    sivn

    Abstract: VN2210 VN2210N2 VN2210N3-G jedec Package TO-39
    Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		vn2210dsfp-vn2210d031411sivn+3vn2210n2vn2210n3-gjedec package to-39 PDF

    DSPD-3TO39N2

    Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		vn2210dsfp-vn2210d071411dspd-3to39n2 PDF

    diode marking 100-10 n2

    Abstract: sivn 2210N2 125OC VN2210 VN2210N2 VN2210N3-G
    Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		vn2210dsfp-vn2210b020209diode marking 100-10 n2+5sivn2210n2125ocvn2210n2vn2210n3-g PDF

    SIVN2210

    Abstract: sivn 125OC VN2210 VN2210N2 VN2210N3-G
    Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		vn2210dsfp-vn2210c032610sivn2210+4sivn125ocvn2210n2vn2210n3-g PDF