VN01 Search Results

SD oid 3C

Abstract: VN0104N6
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) (max) (min) b v dgs TO-52 TO-92 Quad P-DIP* Diet 40V 3.0Î2 2.0A — VN0104N3 VN0104N6 — 60V 3.0Î2 2.0A

VN0106N7

Contextual Info: — VN0104N6/VN0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ R d S ON Order Number / Package BVdgs (max) 14-Pin P-Dip 14-Pin C-Dip* 40V 3Q VN0104N6 VN0104N7 60V 3Q VN0106N6 VN0106N7 * 14-pin Side Brazed C eram ic Dip.

VN0116N3

Abstract: Vn0116 VN01-1 VN0116N2 VN0120ND VN0120N2
Contextual Info: VN0116 VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 TO-220 Dice+ 160V 10Q 0.4A VN0116N2 VN0116N3 VN0116N5 VN0116ND 200V

VN0120N3

Abstract: VN0120N2 VN0120
Contextual Info: Supertex inc. VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Num ber / Package BVdss/ ^D S ON ^D(ON) b v dgs (max) (min) TO-39 TO-92 200V 10ß 0.4A VN0120N2 VN0120N3 Advanced DMOS Technology High Reliability Devices

VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: S u p e rte x inc. VN0104N6A/N0104N7 VN0106N6/VN0106N7 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ Order Number / Package ^D S O N (max) 14-Pin P-DIp 14-Pin C-Dip* 40V 3 fi VN0104N6 VN0104N7 60V 30 VN0106N6 VN0106N7

Contextual Info: VN0106N9 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: 'l £ii£u / ioaucii, One. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features '" »> » *• * *• *• Free from secondary breakdown Low power drive requirement Ease of paralleling Low Ciss and fast switching speeds Excellent thermal stability

VN0104

Contextual Info: Supertex inc. VN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0104 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

VN0109

Contextual Info: Supertex inc. VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

sivn

Abstract: sivn fet marking n3 VN0109N3-G VN0109
Contextual Info: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Data sheet Turned contacts turned crimp male contact for wire 16mm² Part No. VN01 036 0021 1C Series Contacts Subseries Contact Turned contacts COMMON CHARACTERISTICS Wire gauge from 16 Wire gauge AWG from 6 Packaging / supplied as

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

VN0120ND

Abstract: VN0120N2 VN0120 VN0120N3
Contextual Info: VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 200V 10Ω 0.4A VN0120N2 VN0120N3 VN0120ND † MIL visual screening available

Contextual Info: VN0106N4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

Contextual Info: VN0106N7 Transistors N-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.0

Contextual Info: VN0104N6 Transistors N-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)560m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0

VN0120

Abstract: VN0120N2 VN0120N3 DIODE 09A
Contextual Info: VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 200V 10Ω 0.4A VN0120N2 VN0120N3 7 Advanced DMOS Technology High Reliability Devices

125OC

Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

TA 8783 N

Abstract: pin IC 8783 n ss 7941 941L
Contextual Info: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack

VN0106N9

Abstract: VN0104N2 VN0109n5 VN01A VN0106N5
Contextual Info: ^ Supertex inc . V N 01A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss / b v dgs Order Number / Package ^DS O N '□(ON) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE' VN0104N2 VN0104N9 VN0104N3

Contextual Info: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

DSFP-VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination