VI-73 DIODE POWER Search Results

Contextual Info: CD05TDDxxxx-Series DC-DC POWER MODULE 5~6W SINGLE & DUAL OUTPUTS 4:1 Input Range I/O Isolation Input Pi Filter Short Circuit Protection SINGLE OUTPUT MODELS Part Number Input Voltage Output Wattage Output Voltage Output Current Efficiency minimum CD05TDD03S4

sod343

Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

73b51

Abstract: 5962-9311501MXA 7447B SCAN18245TSSC C1996 SCAN18245T SCAN18245TFMQB SCAN18245TSSCX A2279 DIODE B36 smd
Contextual Info: SCAN18245T Non-Inverting Transceiver with TRI-STATE Outputs General Description Features The SCAN18245T is a high speed low-power bidirectional line driver featuring separate data inputs organized into dual 9-bit bytes with byte-oriented output enable and direction

BUZ73

Abstract: SD2822 7a2 diode diode 935 lg LG 932
Contextual Info: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3

D400 transistor

Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

2Sk398

Abstract: 2SJ112
Contextual Info: HITACHI/-COPTOELECTRONICS} l^ r e r S Y O b "73 DËJ 4 ^ 2 0 5 73C 1 0 0 38 H I T ÆU f f T / O H I U h L h C I H O N 1 T J S T 001D03Ö 0 D 2SK398— S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2SJ112

FNP850-12

Abstract: HZZ02002SW HZZ01222-G HZZ02002G resistor in psu
Contextual Info: FNR-5-12G AC-DC Power Shelf Preliminary Data Sheet 4250 Watts, 12VDC Features • Standard configurations are RoHS compliant for all six substances • Wide-input voltage range of 85-264 VAC • Simple installation and operation • Auto-select power limits 1

2SJ102

Abstract: 2sk346 hitachi 2SK345 2SK346 hitachi 2sk346
Contextual Info: HITACHI/{0PT0ELECTR0NICS> 7pVgW20 5 H i I ÄUHI 73 OPTOELECTRONICS / DE~j44TbEDS -y3 C 10017 . DOIGOI? T ’—39~a f D 2SK345,2SK346-SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102

COSMO,3041

Abstract: A076 ic EN60747-5-2 KMOC3041
Contextual Info: cosmo KMOC3Q41 High Reliability Photocoupler UL 1577 File NO.E169586 VDE EN60747-5-2 / EN60950 / EN60065 (File No.40009235) For 115/240 Vac (rms) Application: Outside Dimension:llnit (mm) 1. Solenoid/Valve Controls. 2. Lighting Controls. cosmo 3041 3. Static Power Switches.

2SK383

Contextual Info: HITACHI/-COPTOELECTRONICS} '4 4 9 6 2 U S 73 H ITACHI/ UPlUhLEUTRONICS 4 4TbSDS 001GÜ3E 73C 10032 " D 7"— 3?-// 2SK383-SILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.

LAW005A

Abstract: LAW005B LAW005BK LAW005C LAW005CL LAW005F
Contextual Info: Data Sheet June 2001 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features The LAW005-Series Power Modules use advanced, surfacemount technology and deliver high-quality, compact, dc-dc conversion at an economical price. • Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in.

LAW005F

Abstract: LAW005CL LAW005A LAW005B LAW005BK LAW005C
Contextual Info: Data Sheet April 2008 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features n Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in. n Low profile: 10.7 mm (0.42 in.) n Wide input voltage range: 36 Vdc to 75 Vdc n Input-to-output isolation: 1500 Vdc

Contextual Info: Data Sheet April 2008 LAW005-Series Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input; 5 W Features n Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in. n Low profile: 10.7 mm (0.42 in.) n Wide input voltage range: 36 Vdc to 75 Vdc n Input-to-output isolation: 1500 Vdc

Contextual Info: Yuan Dean Scientific CO.,LTD GA007 SERIES 7Watt, Single & Dual Output ,AC/DC Power Module Converter FEATURES: G A 007 - S 03 ●Universal Input 90~264VAC ●High Efficiency Up To 82% ●Protection: Short Circuit /Overload/Over Voltage ●Fully Encapsulated Plastic Case

2SK513

Abstract: 10091 FET 2SK513 Hitachi Scans-001
Contextual Info: -4 4 9 B 2 U S 'HI IAUH1 / UP i U h L h C I R U N 1O S 7 73C 1 00 89 2SK513 0 7 ~ -3 f-/ / 3>E J LiMcìtiEDS O D I O O S 11! S S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES ' • High Breakdow n Voltage. • • High Speed Sw itching.

LCX08

Abstract: LCX-08 74LCX08
Contextual Info: fZ T ^7 # S C S -T H O M S O N I^D g^(o I[Li(gfi iDei 74LC X 08 LOW VOLTAGE CMOS QUAD 2 INPUT AND GATE WITH 5V TOLERANT INPUTS PRELIMINARY DATA . 5V TOLERANT INPUTS . HIGHSPEED. tpo = 5.5 ns (MAX.) at Vcc = 3V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS

Contextual Info: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous

x1rv

Abstract: SGSP151 SGSP252 sgsp251 P252 C SGSP351 FT04c
Contextual Info: S G S-THOMSON 07E D | 712^237 001703 1 3 73C 17 3 28 o 7 7 3 *1 -0 7 S A L V N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

C25P03QL

Abstract: C25P02QL bt1512
Contextual Info: SCHOTTKY BARRIER DIODE C25P02QL C25P03QL 2 7 .7 A /2 0 ~ 3 0 V S.3{.209 4.7U85I FEATURES » Similar to TO-247AC {TO-3P) Case ° Dual Diodes - Cathode Common ° Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2C087UJ 3.2 .126)080031) MAX

AD96685

Abstract: AD96687 T735 T-73-5 AD96687P
Contextual Info: A N AL OG DE VI CE S INC ANALOG DEVICES 51E D • GfllbflGG GÜBb^bfl OS^ ■ ANA -r 73-53 Ultrafast Comparators AD96685/AD96687 □ FEATURES Fast: 2.5ns Propagation Delay Low Power: 118mW per Comparator Packages: DIP, TCMOO, SOIC, PLCC Power Supplies: +5V, -5 .2 V

2SJ102

Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
Contextual Info: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102

sgsp257

Abstract: GSP-35 P2-58 P357 SGSP258
Contextual Info: S G S-THOnSON 07E J> | 7cìacìS37 0017074 0 I ^ -V. , 73e 173 71 D SGSP257/P258^ r tf I h .SGSP^ 7 /P 3 5 8 J N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: SA MSUNG SE MI C O N D U C T OR INC OE KS54AHCT -f/J KS74AHCT l u d I | 7 ^ 4 1 4 5 0005^32 ñ | Triplé 3-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed end drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS