VFBR Search Results

Contextual Info: 2SC5022 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier Features • High breakdown voltage VfBR CEO= 1500 V Min Outline TO-220FM 1 B a se 2 C o lle c to r 3 Emitter 2SC5022 Absolute Maximum Ratings Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Weight : 1.9g ELECTRICAL CHARACTERISTICS Te = 25°C CHARACTERISTIC Collector Cut-off Current SYMBOL ICBO TEST CONDITION VnB = 15V) IR = 0 Collector-Base Breakdown Voltage VfBRlCBO IC = 2mA, Ie = 0

2n7077

Contextual Info: Tem ic 2N7077 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VfBRJDSSÎV ri)S cn) (Ö) 400 0.30 : . !d(A) 15 TO-254AA Hermetic Package D p o Case Isolated Ô S D S G Top View N-Channel M OSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: 2SC4913 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier Features • High breakdown voltage • VfBR CEO= 2000 V min Outline TO-22QAB 1j 2 Collector ^22 Emitter ^ 2SC4913 Absolute Maximum Ratings Ta = 25°C) Item Symbol Ratings Unit

27 Mhz power amplifier

Contextual Info: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of

max5986

Abstract: vwad MAX5987AETE T1655
Contextual Info: 19-6261; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX5986A/MAX5987A IEEE 802.3af-Compliant, High-Efficiency, Class 1, Powered Devices with Integrated DC-DC Converter General Description The MAX5986A/MAX5987A provide a complete powersupply solution as IEEE 802.3af-compliant Class 1

C2162PX2

Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Contextual Info: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply

EN12

Abstract: QFN32 QFN-32 TPS51220 TPS51220RHBR TPS51220RHBT
Contextual Info: TPS51220 www.ti.com. SLVS785C – OCTOBER 2007 – REVISED JULY 2009 Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller

smd transistor marking A3

Abstract: A3 smd sot-143 telefunken ha 880 P 817 telefunken ha 750 m smd transistor 278 AC
Contextual Info: Temic S595T/S595TR S e m i c o n d u c t o r s MOSMIC for TV-Tüner Prestage with 5 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. £ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.

CNY75

Abstract: CNY75 Series
Contextual Info: Temic Semiconductors CNY75 G Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor The elements are mounted on one leadframe using a optically coupled to a gallium arsenide infrared-emitting coplanar technique, providing a fixed distance between

LDT565630T

Abstract: SON50P300X300X80-11WEED3M 9C06031A7872FKHFT 9C08052A1005FKHFT A8439 A8439EEJTR-T BAV23S GRM188R71C104KA01D T-16-024A
Contextual Info: A8439 Photoflash Capacitor Charger with IGBT Driver and Refresh Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A8439 is a highly integrated IC that charges photoflash capacitors for digital and film cameras. An integrated MOSFET

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

2SC4452

Abstract: QVC5 Q60H
Contextual Info: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

NPN RF Amplifier

Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A

FDK*MIPF2520D

Abstract: FUSE 160mA LTC312 VLF3010AT-4R7M
Contextual Info: Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Noise Pulse-Skipping Operation at Light Loads n Input Voltage Range: 2.5V to 5.5V n Output Voltage Range: 0.6V to 5V n 2.25MHz Constant-Frequency Operation

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

NZT6729

Abstract: TN6729A
Contextual Info: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.

SPRU131

Abstract: TMS320 XDS510 XDS510PP XDS510WS SPRU103
Contextual Info: TMS320C54x C Source Debugger User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., April 1998 SDS SPRU099C TMS320C54x C Source Debugger 1998 User’s Guide TMS320C54x C Source Debugger User’s Guide Literature Number: SPRU099C April 1998

SPRU099

Abstract: SPRU103 TMS320 mp 1009e SPRU099A
Contextual Info: TMS320C5xx C Source Debugger User’s Guide 1994 Microprocessor Development Systems Printed in U.S.A., June 1994, reprinted October 1997 SDS SPRU099A TMS320C5xx C Source Debugger 1994 User’s Guide TMS320C5xx C Source Debugger User’s Guide SPRU099 June 1994

SPRU189

Abstract: SPRU190 XDS510
Contextual Info: TMS320C6x C Source Debugger User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU188D TMS320C6x C Source Debugger 1998 User’s Guide TMS320C6x C Source Debugger User’s Guide Literature Number: SPRU188D January 1998

NESY9140

Abstract: NESYM9140 R3585
Contextual Info: NESY9140 NESYM9140 POWER MOSFET - P CHANNEL T0257AA PACKAGE • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability O ABSOLUTE MAXIMUM RATINGS TL = 25°C unless otherwise noted 1 PARAMETERS/TEST CONDITIONS

Contextual Info: TOSHIBA 2SK2009 i ^ \c i TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nnq Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • • • • + 0.5 25 -0 .3 + 0.25 High Input Impedance. Low Gate Threshold Voltage