VEBO 15V SOT23 Search Results

Contextual Info: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage

cb amplifier

Abstract: FMMT5179 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C

cb amplifier

Abstract: common emitter amplifier FMMT5179 MPS5179 DSA003697
Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C

5P sot23

Abstract: FMMT2907 FMMT2907AR 2F PNP SOT23 FMMT2907A FMMT2907R FMMT2222 FMMT2222A DSA003691
Contextual Info: FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF

FMMT38A

Abstract: FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64 DSA003703
Contextual Info: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C B FMMTA12 – 3W FMMTA13 – 1M FMMTA14 – 1N ABSOLUTE MAXIMUM RATINGS.

Contextual Info: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C

FMMT-A12

Abstract: FMMT38A FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64
Contextual Info: FMMTA12 Not Recommended for New Design Please Use FMMTA14 FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C

FMMTL618

Abstract: FMMTL718 DSA003705
Contextual Info: SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL718 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =210mΩ at 1.5A COMPLEMENTARY TYPE – FMMTL618 PARTMARKING DETAIL – L78 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

relay 12v 100A

Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FMMT918

Abstract: "vhf,uhf transistor" DSA003702
Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage

MMBR5179LT1

Contextual Info: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ.

Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

BFQ31R

Abstract: "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677
Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 – JANUARY 1996 PARTMARKING DETAILS BFQ31 – S2 BFQ31A – S4 BFQ31AR – S5 BFQ31R – S3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage

Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage

MMBR901

Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
Contextual Info: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143

FMMT5089

Abstract: IC5050 FMMT5087 FMMT5088 3025v DSA003697
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS FMMT5088 FMMT5089 ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL— FMMT5088 - 1Q FMMT5089 - 1R E C COMPLEMENTARY TYPES — FMMT5088 - FMMT5087 FMMT5089 - None Available B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available