VDSS 1500V Search Results
VDSS 1500V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TLX9160T |
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Photorelay (MOSFET output), 1a, 1500V/0.05A, 5000 Vrms, SO16L-T, Automotive | Datasheet | ||
| PTMA401120A1AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 4-Surface Mount Module |
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| PTMA401120P2AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 6-Surface Mount Module |
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| PTMA403033N2AZT |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 6-Surface Mount Module -40 to 85 |
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| ISO120G |
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ISOLATION AMPLIFIER, 1500V ISOLATION-MIN, 60kHz BAND WIDTH, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-24/16 |
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VDSS 1500V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IXTK20N150Contextual Info: Advance Technical Information IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS |
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IXTK20N150 IXTX20N150 O-264 O-264) O-264 PLUS247 PLUS247) 100ms 100ms | |
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Contextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTK8N150L IXTX8N150L = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTK8N150L IXTX8N150L O-264 PLUS247 8N15L 100ms | |
PLUS247
Abstract: 013009 IXTK8N150L
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IXTK8N150L IXTX8N150L O-264 PLUS247 8N15L 100ms 013009 IXTK8N150L | |
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Contextual Info: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V |
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IXTK20N150 IXTX20N150 O-264 100ms 20N150 | |
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Contextual Info: IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 |
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IXTJ4N150 O-247TM E153432 100ms 4N150 09-12-12-C | |
IXTH2N150L
Abstract: IXTH2N150
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IXTH2N150L O-247 100ms 2N150L IXTH2N150L IXTH2N150 | |
IXTJ6N150Contextual Info: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTJ6N150 O-247TM E153432 100ms 6N150 IXTJ6N150 | |
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Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTK8N150L IXTX8N150L VDSS ID25 = 1500V = 8A Ω = 5.0Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-264(IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1500 |
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IXTK8N150L IXTX8N150L O-264 PLUS247 338B2 | |
20N150
Abstract: IXTK20N150 432 - 070
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IXTK20N150 IXTX20N150 O-264 O-264) O-264 PLUS247 PLUS247) 100ms 100ms 20N150 432 - 070 | |
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Contextual Info: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTT12N150 IXTH12N150 O-268 O-247 12N150 | |
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Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR |
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IXTT6N150 IXTH6N150 O-268 O-247 6N150 | |
SOT-227B Outline
Abstract: Vdss 1500V IXTN8N150L
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IXTN8N150L OT-227 E153432 338B2 SOT-227B Outline Vdss 1500V IXTN8N150L | |
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Contextual Info: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR |
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IXTK20N150 IXTX20N150 O-264 100ms 20N150 | |
IXTH4N150Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 | |
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IXTH3N150Contextual Info: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 | |
IXTH4N150
Abstract: 4n150
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IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 | |
IXTN8N150LContextual Info: IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A ≤ 3.6Ω Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR |
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IXTN8N150L OT-227 E153432 8N15L 100ms 6-13-A IXTN8N150L | |
IXTH4N150Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTH4N150 O-247 100ms 4N150 9-12-12-C IXTH4N150 | |
IXTH3N150Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 | |
IXTN8N150LContextual Info: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTN8N150L OT-227 E153432 8N15L 100ms IXTN8N150L | |
ixtn8n150l
Abstract: 013009 ixtn8n
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IXTN8N150L OT-227 E153432 8N15L 100ms ixtn8n150l 013009 ixtn8n | |
IXTA4N150HVContextual Info: High Voltage Power MOSFETs VDSS ID25 = 1500V = 4A RDS on 6 IXTA4N150HV IXTT4N150HV N-Channel Enhancement Mode Fast Intrinsic Diode TO-263HV Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M |
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IXTA4N150HV IXTT4N150HV O-263HV 100ms 4N150 9-12-12-C IXTA4N150HV | |
IXTT6N150Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTT6N150 IXTH6N150 O-268 O-247 6N150 | |
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Contextual Info: IXTT12N150HV High Voltage Power MOSFET VDSS ID25 = 1500V = 12A RDS on 2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M |
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IXTT12N150HV O-268HV 12N150 | |