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    IXTT12N150 Search Results

    IXTT12N150 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT12N150
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 12A TO-268 Original PDF 4
    IXTT12N150HV
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1.5KV 12A TO268 Original PDF 147.89KB
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    IXTT12N150 Price and Stock

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    IXYS Corporation IXTT12N150HV

    MOSFET N-CH 1500V 12A TO268
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    DigiKey IXTT12N150HV Tube 21 1
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    Mouser Electronics IXTT12N150HV 149
    • 1 $62.31
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    TTI IXTT12N150HV Tube 300
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    TME IXTT12N150HV 1
    • 1 $68.76
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    IXYS Corporation IXTT12N150

    MOSFET N-CH 1500V 12A TO268
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    DigiKey IXTT12N150 Tube 1
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    Mouser Electronics IXTT12N150 320
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    Future Electronics IXTT12N150 Tube 300
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    TTI IXTT12N150 Tube 30
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    TME IXTT12N150 1
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    IBS Electronics IXTT12N150 300
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    IXYS Corporation IXTT12N150HV-TRL

    MOSFET N-CH 1500V 12A TO268HV
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    DigiKey IXTT12N150HV-TRL Reel 400
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    Littelfuse Inc IXTT12N150

    Mosfet, N-Ch, 1.5Kv, 12A, To-268; Channel Type:N Channel; Drain Source Voltage Vds:1.5Kv; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTT12N150
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    Newark IXTT12N150 Bulk 200 1
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    RS IXTT12N150 Bulk 8 Weeks 30
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    Littelfuse Inc IXTT12N150HV

    Discmosfet N-Ch Std-Hivoltage To-268Aa/ Tube |Littelfuse IXTT12N150HV
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    Newark IXTT12N150HV Bulk 300
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    RS IXTT12N150HV Bulk 8 Weeks 30
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    IXTT12N150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXTT12N150HV High Voltage Power MOSFET VDSS ID25 = 1500V = 12A  RDS on  2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTT12N150HV O-268HV 12N150 PDF

    12N150

    Abstract: IXTH12N150 IXTT12N150
    Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 12N150 IXTH12N150 PDF

    Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT12N150 IXTH12N150 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 12N150 PDF

    Contextual Info: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 PDF

    IXTT12N150

    Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 PDF