IXTH12N150 Search Results

IXTH12N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH12N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 12A T0-247	Original	PDF		4

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IXYS Corporation IXTH12N150 MOSFET N-CH 1500V 12A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH12N150	Tube			1	1 $17.67 10 $17.67 100 $10.84 1000 $9.81 10000 $9.81	Buy Now
Mouser Electronics	IXTH12N150		176			1 $17.84 10 $12.60 100 $12.60 1000 $9.64 10000 $9.64	Buy Now
Quest Components	IXTH12N150		566			1 $33.94 10 $33.94 100 $33.94 1000 $25.46 10000 $25.46	Buy Now
TTI	IXTH12N150	Tube			300	1 - 10 - 100 - 1000 $9.64 10000 $9.64	Buy Now
TME	IXTH12N150				1	1 $19.97 10 $15.79 100 $14.28 1000 $14.28 10000 $14.28	Get Quote
Littelfuse Inc IXTH12N150 Trans MOSFET N-CH 1.5KV 12A 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXTH12N150		990		30	1 - 10 - 100 $10.59 1000 $9.42 10000 $9.42	Buy Now
Arrow Electronics ()	IXTH12N150		990	50 Weeks	30	1 - 10 - 100 $10.59 1000 $9.42 10000 $9.42	Buy Now
	IXTH12N150		30		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IXTH12N150	Bulk			300	1 - 10 - 100 - 1000 $12.42 10000 $12.42	Buy Now
RS	IXTH12N150	Bulk		8 Weeks	30	1 - 10 - 100 $14.16 1000 $13.72 10000 $13.72	Get Quote

IXTH12N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12N150 Abstract: IXTH12N150 IXTT12N150 Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150 12N150 IXTH12N150	PDF
Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT12N150 IXTH12N150 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 12N150	PDF
Contextual Info: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150	PDF
IXTT12N150 Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150	PDF