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IXTH4N150 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH4N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 4A TO-247	Original	PDF		5

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IXYS Corporation IXTH4N150 Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTH4N150				1	1 $11.41 10 $7.70 100 $6.89 1000 $6.38 10000 $6.38	Get Quote
Mouser Electronics	IXTH4N150		162			1 $12.90 10 $8.47 100 $8.47 1000 $6.98 10000 $6.98	Buy Now
TTI	IXTH4N150	Tube			300	1 - 10 - 100 - 1000 $6.82 10000 $6.82	Buy Now
Vyrian	IXTH4N150		2,050			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXTH4N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/; \|Littelfuse IXTH4N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTH4N150	Bulk			300	1 - 10 - 100 - 1000 $6.63 10000 $6.22	Buy Now
	IXTH4N150	Bulk			1	1 $10.22 10 $9.56 100 $9.28 1000 $7.89 10000 $6.71	Buy Now
RS	IXTH4N150	Bulk		8 Weeks	30	1 - 10 - 100 $9.50 1000 $9.50 10000 $9.50	Get Quote
Onlinecomponents.com	IXTH4N150					1 - 10 - 100 $10.36 1000 $4.94 10000 $4.94	Buy Now

IXTH4N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTH4N150 Abstract: 4N150 Contextual Info: Advance Technical Information IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth4n150 o-247 100ms 4n150 +10-26-10-a	PDF
IXTH4N150 Abstract: 4n150 Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth4n150 o-247 100ms 4n150 +10-26-10-a	PDF
IXTH4N150 Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth4n150 o-247 100ms 4n150 +19-12-12-c	PDF
IXTH4N150 Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth4n150 o-247 100ms 4n150 +10-26-10-a	PDF