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    IXTH4N150 Search Results

    IXTH4N150 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH4N150
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 4A TO-247 Original PDF 5
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    IXYS Corporation IXTH4N150

    MOSFET N-CH 1500V 4A TO247
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    Littelfuse Inc IXTH4N150

    DiscMosfet N-CH Std-HiVoltage TO-247AD
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    RS IXTH4N150 Bulk 8 Weeks 30
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    IXTH4N150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH4N150

    Abstract: 4N150
    Contextual Info: Advance Technical Information IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Abstract: 4n150
    Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 9-12-12-C IXTH4N150 PDF

    IXTH4N150

    Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF