IXTH4N150 Search Results

IXTH4N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH4N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 4A TO-247	Original	PDF		5

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IXYS Corporation IXTH4N150 MOSFET N-CH 1500V 4A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH4N150	Tube			300	1 - 10 - 100 - 1000 $4.98 10000 $4.98	Buy Now
Mouser Electronics	IXTH4N150		253			1 $10.48 10 $8.20 100 $8.20 1000 $6.09 10000 $5.42	Buy Now
TTI	IXTH4N150	Tube			300	1 - 10 - 100 - 1000 $5.57 10000 $5.57	Buy Now
TME	IXTH4N150				1	1 $10.02 10 $7.43 100 $6.15 1000 $6.15 10000 $6.15	Get Quote
IBS Electronics	IXTH4N150		300		30	1 - 10 - 100 $8.34 1000 $8.20 10000 $8.20	Buy Now

Vyrian	IXTH4N150		293			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXTH4N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/ Tube \|Littelfuse IXTH4N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTH4N150	Bulk			300	1 - 10 - 100 - 1000 $5.22 10000 $5.22	Buy Now
RS	IXTH4N150	Bulk		8 Weeks	30	1 - 10 - 100 $7.32 1000 $7.08 10000 $7.08	Get Quote

IXTH4N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTH4N150 Abstract: 4N150 Contextual Info: Advance Technical Information IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150	PDF
IXTH4N150 Abstract: 4n150 Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150	PDF
IXTH4N150 Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH4N150 O-247 100ms 4N150 9-12-12-C IXTH4N150	PDF
IXTH4N150 Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150	PDF