VCE30V Search Results
VCE30V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
100MHZ
Abstract: GPN2222A GPN2907A
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Original |
2004/11/29bgpn2907agpn2222a100mhz | |
2N2901
Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
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OCR Scan |
2n2907a2n2907pn2907pn2907a+9 | |
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Contextual Info: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.) |
OCR Scan |
yts3904sc-59f-10hz-15300ne+1 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink |
OCR Scan |
jf61072n6107e69369221d-02+2 | |
2N2905AContextual Info: cs-o 2N/PN2904A 2N/PN2905A 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. "PNP SILICON TRANSISTORS TO-39 It is intended T0-92A Jpj for high speed medium power switching and general purpose amplifier applications. C B E ABSOLUTE MAXIHUM RATINGS |
OCR Scan |
2n/pn2904a2n/pn2905at0-92apn2904a+4 | |
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Contextual Info: KSC326S NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T a- 2 5 ,C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation |
OCR Scan |
ksc326sksa1298ot-23ksd261+4 | |
hx- jeContextual Info: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS |
OCR Scan |
2n/pn2904a2n/pn2905at0-92a2n2904a+5 | |
PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
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Original |
14-dagarpa0016str11006so41p+7 | |
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Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND |
OCR Scan |
ytsz907500ma200mhz-500ma+4 | |
2N2906
Abstract: 2N2906A PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PN2906A
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OCR Scan |
2n2902n2906apn2906a2n2906+6 | |
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Contextual Info: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. |
OCR Scan |
pn2907a2n29072n2907apn2907+4 | |
YTS3904
Abstract: YTS3906
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OCR Scan |
yts3904yts3906sc-59ta-25+4 | |
2sc144
Abstract: 2SC1446
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OCR Scan |
2sc1446ic-10ma100ma2sc144 |