VCC300V Search Results

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.

Contextual Info: GT20J311 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)

333S

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO ¿ToJhìiu Dlf| T D T 7 E S 0 ODltjHbQ 4 f "TD 90D 16260 SEMICONDUCTOR UF-33-3f M G 1 0 0 G 1 J L 1 M G 1 0 0 G 2 C L 1 TECHNICAL DATA M G 1 0 0 G 2 D L 1 -0E¡> d cs W eight : 205g U n it in mm NVJvrWT

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

Contextual Info: T O SH IB A GT10J301 GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5 .9 M A X The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max. Low Saturation Voltage. : V qe (sat) = 2-7V (Max.)

Contextual Info: 2MBI200LB-060 2 ooa : Outline Drawings IG B T ^ E ^ a — ;i/ IGBT MODULE Features • H ig h • te fiS in ttE Low S p e e d S w it c h in g S a tu r a tio n V o lt a g e • S A i l - i r — f- i £ t i t ( M O S ^ — H 8 i a ) • ^ ¿ *3 . — ju ;< 'y S r —

Contextual Info: 1DI300MP-050 300A : Outline Drawings ' < r7 - b ? it. PO W ER T R A N S IS T O R M O D U LE .h ai -,-ia-rJO-, •iNHS: : Features • h p E ^ 'S u High DC Current Gain B • Js iS W S iS liE ^ J^ : Applications >'< —$ • i/lffl'f General Purpose Inverter

3210A

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM50TX-HB j MEDIUM POWER SWITCHING USE ¡ INSULATED TYPE ! QM50TX-HB • Ic • V cex • hFE Collector current. 50A Coliector-emitter voltage.600V DC current gain. 750

Contextual Info: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage

TLP559

Abstract: MIG300J101H
Contextual Info: TOSHIBA M IG300J101H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M I G 3 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.

MIG200J201H

Abstract: TLP559
Contextual Info: TOSHIBA MIG200J201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG200J201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

QM30DY-H

Abstract: QM30DY-HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750

6DI50B-050

Contextual Info: 6DI50B-050 50A [s ^ ^ ^ ; ± '* 7 a. - '• Outline Drawings POWER TRANSISTOR MODULE ■ i t i ! : Features ;fc-f ij ;✓ ?’?'•<+ — KrtSK my • hFE*'' '-' • iSfeSStJK Including Free Wheeling Diode High DC Current Gain Insulated Type ■ f f lii : Applications

Contextual Info: TO SHIBA GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20JB11 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)

Contextual Info: TOSHIBA GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 15.9MAX The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)

toroid FT10

Abstract: toroid core
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45* BUL45F* D esigner’s Data Sheet •Motorola Profwnd Devi«» NPN S ilico n P o w er TVansistor POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and In Switchmode Power

GT30J301

Contextual Info: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)

Contextual Info: TOSHIBA M IG400J101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT M I G 4 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.

Contextual Info: TOSHIBA M IG300J101H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT M I G 3 0 0 J 1 01 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over Temperature in One Package.

D 1414 transistor

Contextual Info: 3SE D POUEREX INC m u a t E • 75^21 0G0M4Û2 ö H P R X KMG24501HB X Pow erex, In c ., Hlllls Street, Youngwood, Pennsylvania 75697 4 1 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 4 1 .14.14 Diode Bridge Input,

mig20j902h

Abstract: mig20j902 120QN inverter mx 3000 a
Contextual Info: TOSHIBA INTEGRATED GTR MODULE MIG20J902H Unit in mm High Power Switching Applications 4-4.t:0.S »-2-M S0.5 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300G1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE^lOO Min. (Ic=300A) . Low Saturation Voltage

Contextual Info: I MITSUBISHI TRANSISTOR MODULES QM30CY-H I MEDIUM POWER SWITCHING USE ! _ INSULATED TYPE j OM30CY-H • 1C Collector cu rre n t. 30A • V cex C ollector-em itter vo lta g e . 600V • hFE DC current g a in .75