VC80 DIODE Search Results

Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Type ”F” Nominal current Nennstrom 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

VC60

Abstract: VC80 vc20 VC80 diode VC40 VC80F
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

VC60

Abstract: E175067 D30VC60 10-32 UNF M5 vc20 VC80 diode
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

D30VC60

Abstract: VC40 VC80 vc20 VC60
Contextual Info: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

VC80

Abstract: alu circuit with transistor
Contextual Info: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Type “F” Type “W” Dimensions / Maße in mm Nominal current – Nennstrom 30 A Alternating input voltage – Eingangswechselspannung 60…250 V Dimensions – Abmessungen

pnp 1500v 8a

Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Contextual Info: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV

BF959

Contextual Info: R a tin g Sym bol V alue U n it C o U e c to r-E m itte r V olta g e VCEO 20 Vdc C o lle c to r-B a s e V olta g e VC80 30 Vdc E m itte r-B a s e V olta g e VEBO 3 0 Vdc C o lle ctor C u rre n t - C o n tin u o u s 'C 100 mAdc To tal D e v ic e D i s s i p a t i o n @ T a = 2 5 ° C

transistor bsr60

Abstract: BSR60 NPN Darlington transistor BSR61 bsr62
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BSR60; BSR61 ; BSR62 FEATURES PINNING • High current max. 1 A PIN DESCRIPTION • Low voltage (max. 80 V) 1 base • Integrated diode and resistor. 2 collector 3 emitter APPLICATIONS

DIODE D60

Abstract: VC100 VC120 VC20 VC40 VC60 VC80 VC80 diode
Contextual Info: D60 VC20 … D60 VC120 Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.5 x 28.5 x 10 [mm]

Contextual Info:  D60 VC20 … D60 VC120 Silizium-Doppeldioden Silicon-Twin Rectifiers Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.6 x 28.6 x 10 [mm]

VC60

Abstract: diode d60
Contextual Info: D60 VC20 … D60 VC120 Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.5 x 28.5 x 10 [mm]

DIODE D60

Abstract: D60VC120F
Contextual Info: D60 VC20 F … D60 VC120 F Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.6 x 28.6 x 10 [mm]

DIODE F22

Abstract: 1300 3d
Contextual Info: ptot VCE0 VCB0 VCEX* T/v=25°C min. <W> V 10 tt 1300* 10 tt 1500* 10 tt 1500* t 1700* 10 t 12.5 # 1300* 12.5 tt 1500* 12.5 t t 1500* t 1500* 12.5 t t 1700* 12.5 t 60 400 60 400 60 330 330 60 400 60 400 60 1300 75 75 1500 1700 75 400 90 400 90 330 90 90 330

102 TRANSISTOR

Abstract: KD221 KD221K03 VC80 X1000
Contextual Info: m M B E X KD221K03 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lin Q t O H Transistor Module 30 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750

BDV64C

Abstract: BDV64B B0V64B 8DV64B
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW

BDX67

Abstract: transistor bdx66 BDX66B HC10A BDX66 BDX67C transistor NES BDX66A BDX66C BDX67A
Contextual Info: SEMELAB LIMITED J^e>x oloC 2 iûOH.Ci(o. SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,

BDX34C

Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright 1997. Power Innovations Limited, UK_ • AUGUST 1983 - REVISED MARCH 1907 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature

BDT60C ST

Abstract: BDT60C
Contextual Info: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C • 50 W at 25°C Case Temperature

TRANSISTOR TT 2158

Abstract: 1200 va ups circuit diagram QM600HA-2H QM600HA-2HK QM600HA qm600
Contextual Info: MITSUBISHI TRANSISTOR MODULES .p f c V -V QM600HA-2HK m W HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-2HK Collector current.600A j Collector-emitter voltage. 1000V j hFE DC current gain. 75

Contextual Info: f M ITSUBISHI TRAN SISTOR M O D U LES ! QM75E2Y/E3Y-H | HIGH POWER SWITCHING USE Í _INSULATED TYPE j QM75E2Y/E3Y-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 600V

vertical IC tv crt

Abstract: 2sc3503 2sc378s
Contextual Info: • SIUCON TRANSISTORS FOR TV/VTR USE TV/CRT DISPLAY APPLICATIONS I e New* {Classified by package and arranged in order of increasing Pp. Minus sign for PNP is omitted due to space limitations.) fol» Muuhr Applications Absolut« Maximum Ratings/T4 = 25t!

6DI30A-050

Abstract: GGT DIODE M603 b1476 TJI-25
Contextual Info: 6DI3OA-O5O 30a ✓< 7 - — ’S ± y < I7 - ^ > o . - ) U : Outline Drawings ) V POWER TRANSISTOR MODULE (m)| H.5 7 ~H.iT , H.5 , 11.5 (101 F e a tu re s 7 l) — U > ? ? ' ( # — K rt# 'h F E ^ 'iS i.' In c lu d in g Free W h e e lin g D iode H igh DC C u rrent Gain

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM300DY-24 j j j HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 • Ic • V cex • hFE Collector current. 300A