V837 Search Results

V836

Abstract: V833 V838 V840 V839 V835 V837 V831 diode V830 V831
Contextual Info: 5238534 KNOX SEMICONDUCTOR INC. IT Varactor Diodes 99D 00140 D DEj5E3fl534 DDDD14Q 0 T OI V830 to V840 Type Number Min V830 V831 V832 V833 V834 V835 V836 V837 V838 V839 V840 13.5 16.2 19.8 24.3 29.7 35.1 42.3 50.4 61.2 73.8 90.0 Ct Diode Capacitance Vr = 4 Vdc, f = 1 MHz

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

MV830

Abstract: C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838
Contextual Info: MV830 thru MV840 SILICON Silicon voltage-variable capacitance diodes, signed for electronic-tuning applications from de­ to 15 1 0 0 pF. cathode end MAXIMUM RATINGS <TC = 2 5 ° C unless otherwise noted) Sym bol Value Unit Reverse Voltage VR 30 Vdc Forward Current

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

V839

Contextual Info: K n o x S e m ic o n d u c t o r , In c ABRUPT VARACTOR DIODES MV830 - MV840 TYPE N UM BER C t DIODE C APACITA NCE Q, Q U A LIT Y FACTO R Vr = 4 Vdc f = 50 MHz MIN TYP Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX TR , TU N IN G RATIO f = 1 MHz C *4V / C-25V MIN

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: K n o x S e m ic o n d u c t o r , I n c , ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NU M BER Q, Q UALITY FACTOR Vr = 4 Vdc f = 50 M Hz MIN TYP D IODE CAPACITANCE V r = 4 Vdc, f = 1 M Hz pF MIN NOM MAX Ct TR, TUNING RATIO f = 1 M Hz C*4V / C-25V MIN TYP