V273 Search Results

v273

Contextual Info: FQV2113 • FQV2103 · FQV293 · FQV283 · V273 · FQV263 · FQV253· FQV243 FlexQTMIII 3.3 Volt Synchronous x9/x18 First-In/First-Out Queue Memory Organization Device Memory Organization Device 262,144 x 18 / 524,288 x 9 131,072 x 18 / 262,144 x 9 65,536 x 18 / 131,072 x 9

v273

Contextual Info: FQV2113 •FQV2103 ·FQV293 ·FQV283 ·V273 ·FQV263 ·FQV253·FQV243 FlexQTMIII 3.3 Volt Synchronous x9/x18 First-In/First-Out Queue Memory Organization Device Memory Organization Device 262,144 x 18 / 524,286 x 9 131,072 x 18 / 262,144 x 9 65,536 x 18 / 131,072 x 9

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

SN74V273

Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

diode T25-4

Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

d358

Abstract: D35B pitch 0.4 QFP 256p D20B D22B D24B D268 D28B LH5420 LH543620
Contextual Info: LH5420 256 x 36 x 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 x 36-bit FIFO Buffers • PQFP to PGA Package Conversion * • Full 36-bit Word Width FUNCTIONAL DESCRIPTION

GSR 10,8

Abstract: DLL5 BG432 ic 404 BB112 equivalent
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)

SPRA547

Abstract: v273 SN74V263 SN74V263-EP SN74V263PZAEP SN74V273 SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP
Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

AF125

Abstract: n345 pioneer amplifier an214 diode t25 4 d9 DIODE T25-4 AY102 AF155 AN214 amplifier horizontal driver transistor D155 IC AN214
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

v273

Abstract: 910nm K2P00
Contextual Info: K2P00;:.V27-3: O K I electronic components 0LD234 G aA IA s Infrared Light Emitting Diode GENERAL DESCRIPTION The O LD234 is a high-output GaAIAs infrared light em itting diode sealed w ith a transparent epoxy resin in a TO-46 case. Its light em ission wavelength peaks at 910 nm.

hcpl 925

Abstract: 70n90 hcpl2731 equivalent
Contextual Info: W a g HEW LETT m SCM P A C K A R D D ual Channel Low Input Current, H igh Gain O ptocouplers 8 P in DIP and SOIC-8 Technical Data F e a tu re s • A vailable in 8 Pin DIP and SOIC-8 • H igh Current Transfer R atio-1800% • Low Input Current Requirem ent - 0.5 mA

XCV1000E

Abstract: AH273 AF245 diode t25 4 d9 D2641 T25-4 L9 ae3219 DS0224 t2943 T25 4 F8
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-4 v2.3 November 15, 2001 Preliminary Product Specification Virtex-E Pin Definitions Pin Name Dedicated Pin Direction GCK0, GCK1, GCK2, GCK3 Yes Input Clock input pins that connect to Global Clock Buffers.

A12181

Abstract: A12194 A12198 LA3880N a12197 A12168 A12160 A12176 LA3880 A12193
Contextual Info: 注文コードNo.N6 0 8 3 No. N 6 0 8 3 51501 新 LA3883M モノリシックリニア集積回路 カーTV用 SIF1チップIC LA3883MはカーTV用に開発されたSIF, ノイズキャンセラ, 国内TV音声多重復調を1チップにしたICで LA3880NMの改良品である。

AN214 amplifier

Abstract: pioneer amplifier an214 transistor ad161 AD161 k2642 DIODE T25-4 horizontal driver transistor D155 intel G31 circuit diagram k363 n345
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

XCV1600E

Abstract: XCV2000E K251 AF125 j281 K235 pioneer amplifier an214 DS022-1 XCV1000E XCV100E
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

82358

Abstract: 82357 intel 82358 82358DT t430 transistor TIMER ST3 82C594 intel 82357 v273 82C37
Contextual Info: in te i 82357 INTEGRATED SYSTEM PERIPHERAL ISP Provides Enhanced DMA Functions — IS A /E IS A DMA Compatible Cycles — All Transfers are Fly-By Transfers — 32-Bit Addressability — Seven Independently Programmable Channels — Provides Timing Control fo r 8-, 16-,

K2466

Abstract: H1342 AU61
Contextual Info: 901592 Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.5 July 10, 2000 3* Features Preliminary Product Specification High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family

A21n

Abstract: digital dice design VHDL k41 dob Quadrature Decoder Interface ICs
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.9 February 12, 2001 Preliminary Product Specification Features • • • • High-Performance Built-In Clock Management Circuitry Densities from 58 Kb to 4 Mb system gates - Eight fully digital Delay-Locked Loops (DLLs)

K363 equivalent

Abstract: n345 AF125 XCV1000E d30122 A281 horizontal driver transistor D155 AY102 j281 pioneer amplifier an214
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.7 September 20, 2000 Preliminary Product Specification Features • • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication