V1634 Search Results

V1660

Abstract: V1652-V1660 V1638 v1650 V5100 v1620 V1622 V1626 V1628 V1630
Contextual Info: 'T'ol 99D 00141 DE|S23flS34 OODOIMI 1 | 5238534 K N O X S E M I C O N D U C T O R INC TT Varactor Diodes VI620 to VI650 V1620 VT622 V I 624 V1626 V1628 V1630 V1632 V1634 V1636 V1638 V1640 V1642 V1644 V1646 V1648 V1650 Min PF Norn Max 6.1 7.4 9.0 10.8 13.5

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

Contextual Info: MOTOROLA Order this document by MV1626/D SEMICONDUCTOR TECHNICAL DATA Silicon Tlining Diodes MV1626 thru MV1650 T hese ep itaxial p a ssiva te d tun ing diodes are d e sig ned fo r A F C ap plicatio ns in radio, TV, and general e le c tro n ic -tu n in g .

V1660

Abstract: V5015 V5056 V1662-V1666 v1652 v1650 I652
Contextual Info: Varactor Diodes V I620 to V I650 Type Ct Diode Capacitance Q, Figure of Merit TR, Tuning Ratio Number Vr = 4 Vdc, f = 1 MHz Vr = 4 Vdc f = 50 MHz C2/C20 = 1 MHz Min (PF Nom 6.1 7.4 90 10.8 13.5 16.2 180 19 8 24.3 29 7 35.1 42 3 50.4 612 73 8 90.0 6.8 8.2

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

V1644

Abstract: DAT20
Contextual Info: MV1620 thru SILICON EPICAP DIODES MV1650 . epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. CASE 51-02 DO-204AA DO-7 • M axim u m W orking Voltage of 20 V • Excellent Q Factor at High Frequencies

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV1620 THRU MV1650 Silicon Epicap Diodes . . . epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. VOLTAGE-VARIANCE CAPACITANCE DIODES 6.8-100 pF 20 VOLTS • M aximum Working Voltage of 20 V

Contextual Info: MVI620 thru SILICON EPICAP DIODES MV1650 . . . e p ita xia l p assivated tu n in g d io d e s d esig n ed fo r A F C a p p lic a tio n s in rad io, TV, a n d gene ral electronic-tuning . CA SE 51-02 DO-204AA DO-7 • M a x im u m W o rkin g V o lta g e o f 20 V