V1200 Search Results
V1200 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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V1200 | General Microcircuits | High Voltage Driver | Scan | 107.96KB | 1 |
V1200 Price and Stock
Seiko Epson Corporation FA-238V-12.0000MB-W3CRYSTAL 12.0000MHZ 12PF SMD |
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FA-238V-12.0000MB-W3 | Reel | 40,750 | 250 |
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Seiko Epson Corporation FA-238V-12.0000MF10V-K0CRYSTAL 12.0000MHZ 10PF SMD |
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FA-238V-12.0000MF10V-K0 | Reel | 869 | 1,000 |
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Abracon Corporation ASV-12.000MHZ-EC-TXTAL OSC XO 12.0000MHZ HCMOS SMD |
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ASV-12.000MHZ-EC-T | Cut Tape | 813 | 1 |
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Abracon Corporation ASDTDV-12.000MHZ-XY-TXTAL OSC XO 12MHZ CMOS SMD |
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ASDTDV-12.000MHZ-XY-T | Digi-Reel | 486 | 1 |
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ASDTDV-12.000MHZ-XY-T | Reel | 10 Weeks | 1,000 |
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ASDTDV-12.000MHZ-XY-T | 1,979 |
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Honeywell Sensing and Control CSHV1200A-001CURRENT SENSOR HE/OL 1200A |
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CSHV1200A-001 | Box | 98 | 1 |
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CSHV1200A-001 | 90 |
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CSHV1200A-001 | Bulk | 25 | 1 |
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CSHV1200A-001 | Bulk | 100 | 5 |
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CSHV1200A-001 |
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V1200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N914 diode
Abstract: V1200 1N914 General Microcircuits RW02 OV 780 HI500
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V1200 100pf 1N914 --0601J005 rfl10Â I-500 1N914 diode V1200 General Microcircuits RW02 OV 780 HI500 | |
CBLCTB68C4DROP
Abstract: DMS-250 V1200-4E1 NetStructure voice recorder player ic DM 321 E96804 ECTF V1200 EBZUSA-31207-XD-T
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DM/V960-4T1, DM/V1200-4E1, DM/V480-4T1, DM/V600-4E1 DM/V600-4E1 CBLCTB68C4DROP DMS-250 V1200-4E1 NetStructure voice recorder player ic DM 321 E96804 ECTF V1200 EBZUSA-31207-XD-T | |
C1000B
Abstract: 3020C
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KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C | |
n12004
Abstract: ZT5085 DMV1200BTEP MPCHC5091 dmv160 SS7SPCI4 SS7HDP SS7HDCD16 IP601 V1200-4E1
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9466FN05 n12004 ZT5085 DMV1200BTEP MPCHC5091 dmv160 SS7SPCI4 SS7HDP SS7HDCD16 IP601 V1200-4E1 | |
1200w power amplifier circuit diagram
Abstract: D50N03-10 D50N03 1200w amplifier Fairchild SH D50n
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RC5053 1200w power amplifier circuit diagram D50N03-10 D50N03 1200w amplifier Fairchild SH D50n | |
Contextual Info: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416V1000BJ 1Mx16 40SOJ | |
Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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DQ0-DQ15 00303bS KM416C1200BT Tb4142 KM416C1200BT) | |
6mbp20rta060
Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
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REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120 | |
C44BXFP
Abstract: arcotronics c44 capacitor V1200
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C44/B 4BXGP4250ZA0C44BXGP4300ZA0C44BXGP4400ZA0- C44BXFP arcotronics c44 capacitor V1200 | |
Contextual Info: KM416C1000C, KM416C1200C KM416V1000C, V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This |
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KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms | |
v068Contextual Info: EMI / RFI Filters Shape and Dimensions TRANSFORMERS & COILS Unit:mm 24±0.5 30.0max 20±0.5 4.0±1 ø0.8 20±0.5 24.5max •HF28H TYPE 30.0max 24±0.5 10±0.5 35.5max. •HF28V TYPE 13±0.5 30.0max. 4.0±1 ø0.8 13±0.5 10±0.5 22.0max. HF28H / 28V This is a common-mode choke coil for noise prevention with windings on separated bobbins |
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HF28H HF28V ForHF28H/V-068007 HF28H/V-039009 HF28H/V-025010 HF28H/V-016015 HF28H/V-008020 HF28H/V-005625 HF28H/V-003330 v068 | |
Contextual Info: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15 | |
PIMG80PBXDNI
Abstract: D640S Dialogic DL300916 D600JCT1E1120 DMV4802T1PCIHIZ CBLD120PCI25PP DMV480A-2T1 D480JCT1T1U PIMG80LS SI80PCI
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Contextual Info: O ctober 1998 LM2637 Motherboard Power Supply Solution with a 5-Bit Programmable Switching Controller and Two Linear Regulator Controllers General Description Both linear controllers have under voltage latch-off. The LM 2637 provides a com prehensive em bedded pow er |
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LM2637 24-pin | |
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Contextual Info: KM416C1000B, KM416C1200B KM416V1000B, V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333 | |
Contextual Info: V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416V1200BJ 1Mx16 416V1200BJ) 003072D 3D721 | |
Contextual Info: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416V1000BT 1Mx16 1000BT) 7Tb4142 GG30b2b | |
Contextual Info: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B | |
Contextual Info: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh |
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KM416C1200BJ 1Mx16 7Tb414E GD3D331 | |
WR30
Abstract: astec ps PH50 PH150F Ericsson artesyn Powercube dc dc converter PKA20 PH75F 280
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EMQ150, V1200, V1-J00, WR30 astec ps PH50 PH150F Ericsson artesyn Powercube dc dc converter PKA20 PH75F 280 | |
C1000B
Abstract: KM416CI200BJ
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KM416C1200BJ 1Mx16 40SOJ C1000B KM416CI200BJ | |
ISA100Contextual Info: Memo Plastic Film Capacitors C O N T E N T S Main Applications & Main Products Page:02-03 Summary of Products Page:04-05 Precautions and Safety Considerations Page:06-07 Permissible Voltage in AC Corresponding to DC Rated Voltage Page:08 Announcement of Discontinuation |
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29-3he ISA100 | |
EBZUSA-31207-XD-T
Abstract: Automatic Speech Recognition for conference CBLCTB68C3DROP 5630x DM/F300 E96804 "5ESS" VOICE RECORDER IC TR62411 RJ-48C BNC
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CTX02
Abstract: CTX02-13198 2200PF NDB6030L RC5053 SSOP-20 electrolytic capacitor 10000 uf 16 wv 12TS-2R5SP
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RC5053 S0-20 SSOP-20 DS30005053 CTX02 CTX02-13198 2200PF NDB6030L RC5053 electrolytic capacitor 10000 uf 16 wv 12TS-2R5SP |