C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-footc1383 npn transistor collector base and emitternpn transistor c1383c1383 transistor+7c1383 npn transistorlight-dependent resistor specificationc1983 transistorpin configuration of c1383 transistorlhi968lhi878c1383
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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cat0506pfnd-100qfnd-100c30724e+7yag-444-4aingaas apd quadrantperkinelmer fnd-100qsi apd photodiodenir emitter leds with 700 to 900 nmspcm-aqrc30950e
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IC 7405
Abstract: UV diode 200 nm UV-100BG uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode
Contextual Info: UV Series: 3030hG5 QGODlbS E7E D E G & G JU DSON Multi-Element Features • • • • ô Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure Peak Responsivity: 0.62 A /W at 900 Nanometers
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3030hg5uv-100bguv-100bquv-140bq-2+12uv-140bq-4uv-140-2uv-140-4ic 7405uv diode 200 nmuv photodiode, gapsalemuv diode 250 nmuv-100v1402140bqdual photodiode
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UV140BQ4
Abstract: 140BQ-2 UV-140BQ-4 UV100BG
Contextual Info: E G 8. G/CANADA/OPTOELEK UV Series: 47E » 3Q3DblO GÜDDB1D E • CANA Multi-Element Features • • • • Cross Talk < 1 % Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure • • • Peak Responsivity:
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uv-100bguv-140bq-2uv-140bq-4uv-100bq+6uv-140-4uv-140-2/uv-140-4uv-140-2uv140bq4140bq-2uv100bg
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UV100BG-DUAL
Abstract: uv photodiode, GaP 140BQ 3030L UV100BG UV1404 UV-100BQ
Contextual Info: E G & G 57E JUDSON UV Series: D 3030L. G5 O DDDl bS ô 'T'41-S’i Multi-Element Features • • • • Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure • • • Peak Responsivity:
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3030luv-100bguv-100bquv-100+8uv-140-2uv-140-4uv-140-2/uv-140-4uv100bg-dualuv photodiode, gap140bquv100bguv1404
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uv photodiode, GaP
Abstract: UV100BG-DUAL UV-140BQ-4 UV-140-2 UV-140BQ-2 uv photodiode UV-100BG 140BQ uv 100bg UV-100BQ
Contextual Info: E fi & fi/CANAKA/OPTOELEK UV Series: 47E D • 3030bl0 00 003 10 2 * C A N A -V/-55 Multi-Element_ Features • • • • Cross Talk < 1% Between Elements Linearity Over W ide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure •
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303gbuv-100bguv-100bquv-140bq-2+9uv-140bq-4uv-140-4uv-140-2uv-140-2/uv-140-4uv photodiode, gapuv100bg-dualuv photodiode140bquv 100bg
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